Measuring and Modeling the Scaling Trend of the RF Noise in MOSFETs

H. L. Kao; Albert Chin; C. C. Liao; Sean P. McAlister; J. Kwo; M. Hong

Measuring and Modeling the Scaling Trend of the RF Noise in MOSFETs

H. L. Kao
, Albert Chin
, C. C. Liao
, Sean P. McAlister
, J. Kwo
, M. Hong

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Using a microstrip line layout, a low minimum noise figure (NF_min) of 0.46 dB at 10 GHz, along with a 16.6 dB associated gain has been measured directly for an 8-finger 90nm node MOSFET (L_G= 65nm). A self-consistent DC, f_t and NF_min device model was developed, which allows prediction of the down-scaling trend of RF MOSFETs into deep nm scale.

Original language	English
Title of host publication	64th DRC 2006 - Device Research Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	65-66
Number of pages	2
ISBN (Electronic)	0780397495, 9780780397491
State	Published - 2006
Externally published	Yes
Event	64th Device Research Conference, DRC 2006 - Parker, United States Duration: 26 06 2006 → 28 06 2006

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Conference

Conference	64th Device Research Conference, DRC 2006
Country/Territory	United States
City	Parker
Period	26/06/06 → 28/06/06

Bibliographical note

Publisher Copyright:
© 2006 IEEE.

Cite this

@inproceedings{f3a71faed8ff40afa96caac74246798e,

title = "Measuring and Modeling the Scaling Trend of the RF Noise in MOSFETs",

abstract = "Using a microstrip line layout, a low minimum noise figure (NFmin) of 0.46 dB at 10 GHz, along with a 16.6 dB associated gain has been measured directly for an 8-finger 90nm node MOSFET (LG= 65nm). A self-consistent DC, ft and NFmin device model was developed, which allows prediction of the down-scaling trend of RF MOSFETs into deep nm scale.",

author = "Kao, \{H. L.\} and Albert Chin and Liao, \{C. C.\} and McAlister, \{Sean P.\} and J. Kwo and M. Hong",

note = "Publisher Copyright: {\textcopyright} 2006 IEEE.; 64th Device Research Conference, DRC 2006 ; Conference date: 26-06-2006 Through 28-06-2006",

year = "2006",

language = "英语",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "65--66",

booktitle = "64th DRC 2006 - Device Research Conference",

address = "美国",

}

Kao, HL, Chin, A, Liao, CC, McAlister, SP, Kwo, J & Hong, M 2006, Measuring and Modeling the Scaling Trend of the RF Noise in MOSFETs. in 64th DRC 2006 - Device Research Conference. Device Research Conference - Conference Digest, DRC, Institute of Electrical and Electronics Engineers Inc., pp. 65-66, 64th Device Research Conference, DRC 2006, Parker, United States, 26/06/06.

Measuring and Modeling the Scaling Trend of the RF Noise in MOSFETs. / Kao, H. L.; Chin, Albert; Liao, C. C. et al.
64th DRC 2006 - Device Research Conference. Institute of Electrical and Electronics Engineers Inc., 2006. p. 65-66 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Measuring and Modeling the Scaling Trend of the RF Noise in MOSFETs

AU - Kao, H. L.

AU - Chin, Albert

AU - Liao, C. C.

AU - McAlister, Sean P.

AU - Kwo, J.

AU - Hong, M.

PY - 2006

Y1 - 2006

N2 - Using a microstrip line layout, a low minimum noise figure (NFmin) of 0.46 dB at 10 GHz, along with a 16.6 dB associated gain has been measured directly for an 8-finger 90nm node MOSFET (LG= 65nm). A self-consistent DC, ft and NFmin device model was developed, which allows prediction of the down-scaling trend of RF MOSFETs into deep nm scale.

AB - Using a microstrip line layout, a low minimum noise figure (NFmin) of 0.46 dB at 10 GHz, along with a 16.6 dB associated gain has been measured directly for an 8-finger 90nm node MOSFET (LG= 65nm). A self-consistent DC, ft and NFmin device model was developed, which allows prediction of the down-scaling trend of RF MOSFETs into deep nm scale.

UR - https://www.scopus.com/pages/publications/57049145293

M3 - 会议稿件

AN - SCOPUS:57049145293

T3 - Device Research Conference - Conference Digest, DRC

SP - 65

EP - 66

BT - 64th DRC 2006 - Device Research Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 64th Device Research Conference, DRC 2006

Y2 - 26 June 2006 through 28 June 2006

ER -

Measuring and Modeling the Scaling Trend of the RF Noise in MOSFETs

Abstract

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Bibliographical note

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