Abstract
The mechanical strength of the thin dies especially with copper through-silicon via (Cu-TSV), has to be determined for ensuring good yield during manufacture handling and packaging. In this study, three test methods: a line-load on elastic-foundation (LoEF) test, a 3-point bending (3PB) test and a 4-point bending (4PB) test are used for the strength determination of Cu-TSV thin memory dies. The results of displacement (deflection) versus applied load of TSV memory die and corresponding failure loads are presented. The maximum mechanical failure stress, so called apparent strength, of memory dies is determined from experimental failure loads associated with finite element analysis. In addition, the actual strength of memory dies, by the superposition of mechanical stress and thermal residual stress, is applied to predict the failure initiation point of memory dies. It is found that actual strengths of memory dies (controlled by Cu-TSV) obtained from these three tests are consistent, but with only 60% of the die strength without Cu TSV.
Original language | English |
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Title of host publication | 2015 10th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2015 - Proceedings |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 107-110 |
Number of pages | 4 |
ISBN (Electronic) | 9781467383561 |
DOIs | |
State | Published - 23 12 2015 |
Event | 10th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2015 - Taipei, Taiwan Duration: 21 10 2015 → 23 10 2015 |
Publication series
Name | 2015 10th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2015 - Proceedings |
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Conference
Conference | 10th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2015 |
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Country/Territory | Taiwan |
City | Taipei |
Period | 21/10/15 → 23/10/15 |
Bibliographical note
Publisher Copyright:© 2015 IEEE.
Keywords
- 3D IC
- Die strength
- TSV
- Thin die