Memory characteristics of atomic layer deposited HfO2 nanocrystal capacitors with IrOx metal gate

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2008
Event	2008 International Workshop on Dielectric - Tokyo, Japan Duration: 05 11 2008 → 07 11 2008

Conference	2008 International Workshop on Dielectric
Period	05/11/08 → 07/11/08

Cite this

@conference{99951e30834e4239bc26ca936adb7b58,

title = "Memory characteristics of atomic layer deposited HfO2 nanocrystal capacitors with IrOx metal gate",

author = "Atanu Das and W. Banerjee and Rahaman, \{S. Z.\} and Siddheswar Maikap and Liann-Be Chang",

year = "2008",

language = "American English",

note = "2008 International Workshop on Dielectric ; Conference date: 05-11-2008 Through 07-11-2008",

}