Memory characteristics of atomic layer deposited high-k HfAlO nanocrystals

Siddheswar Maikap, T. Y. Wang, P. J. Tzeng, D. Panda, L. S. Lee, J. R. Yang, M. J. Kao, M. J. Tsai

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2007
Event	10th International Conference on Advanced Materials (IUMRS-ICAM) - Bangalore, India Duration: 08 10 2007 → 13 10 2007

Conference	10th International Conference on Advanced Materials (IUMRS-ICAM)
Period	08/10/07 → 13/10/07

Cite this

@conference{37272bd7142f49c9ae0e413f895fc894,

title = "Memory characteristics of atomic layer deposited high-k HfAlO nanocrystals",

author = "Siddheswar Maikap and Wang, {T. Y.} and Tzeng, {P. J.} and D. Panda and Lee, {L. S.} and Yang, {J. R.} and Kao, {M. J.} and Tsai, {M. J.}",

year = "2007",

language = "American English",

note = "10th International Conference on Advanced Materials (IUMRS-ICAM) ; Conference date: 08-10-2007 Through 13-10-2007",

}

TY - CONF

T1 - Memory characteristics of atomic layer deposited high-k HfAlO nanocrystals

AU - Maikap, Siddheswar

AU - Wang, T. Y.

AU - Tzeng, P. J.

AU - Panda, D.

AU - Lee, L. S.

AU - Yang, J. R.

AU - Kao, M. J.

AU - Tsai, M. J.

PY - 2007

Y1 - 2007

M3 - Proceeding

T2 - 10th International Conference on Advanced Materials (IUMRS-ICAM)

Y2 - 8 October 2007 through 13 October 2007

ER -