Memory characteristics of IrOx metal nanocrystals embedded in high- κ Al2O3 films with IrOx metal gate

S. Maikap; W. Banerjee; W. C. Li; J. R. Yang

Memory characteristics of IrO_x metal nanocrystals embedded in high- κ Al₂O₃ films with IrO_x metal gate

S. Maikap^*
, W. Banerjee
, W. C. Li
, J. R. Yang

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University
National Taiwan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The memory characteristics of IrO_x metal nanocrystals in an n-Si/SiO₂/Al₂O₃/IrO_x/Al ₂O₃/IrO_x structure with a small EOT of ∼6 nm have been investigated. The IrO_x metal nanocrystals with a small size of ∼3 nm and high-density of ∼0.7×10¹³/cm ² have been observed. The enhanced memory characteristics with a large memory window of ΔV-4V at a small gate voltage of <5V and good endurance of 10⁴ cycles are achieved due to the charge storage in the IrO_x nanocrystals.

Original language	English
Title of host publication	2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009
Pages	378-381
Number of pages	4
State	Published - 2009
Event	2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009 - Genoa, Italy Duration: 26 07 2009 → 30 07 2009

Publication series

Name	2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009

Conference

Conference	2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009
Country/Territory	Italy
City	Genoa
Period	26/07/09 → 30/07/09

Keywords

AlO
Flash memory
High-κ
IrO nanocrystals
Metal gate
Nanotechnology
Nonvolatile memory

Cite this

@inproceedings{95b89d305c5f4f8a802f91b30c214d60,

title = "Memory characteristics of IrOx metal nanocrystals embedded in high- κ Al2O3 films with IrOx metal gate",

abstract = "The memory characteristics of IrOx metal nanocrystals in an n-Si/SiO2/Al2O3/IrOx/Al 2O3/IrOx structure with a small EOT of ∼6 nm have been investigated. The IrOx metal nanocrystals with a small size of ∼3 nm and high-density of ∼0.7{\texttimes}1013/cm 2 have been observed. The enhanced memory characteristics with a large memory window of ΔV-4V at a small gate voltage of <5V and good endurance of 104 cycles are achieved due to the charge storage in the IrOx nanocrystals.",

keywords = "AlO, Flash memory, High-κ, IrO nanocrystals, Metal gate, Nanotechnology, Nonvolatile memory",

author = "S. Maikap and W. Banerjee and Li, \{W. C.\} and Yang, \{J. R.\}",

year = "2009",

language = "英语",

isbn = "9789810836948",

series = "2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009",

pages = "378--381",

booktitle = "2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009",

note = "2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009 ; Conference date: 26-07-2009 Through 30-07-2009",

}

Maikap, S, Banerjee, W, Li, WC & Yang, JR 2009, Memory characteristics of IrO_x metal nanocrystals embedded in high- κ Al₂O₃ films with IrO_x metal gate. in 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009., 5394664, 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009, pp. 378-381, 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009, Genoa, Italy, 26/07/09.

Memory characteristics of IrO_x metal nanocrystals embedded in high- κ Al₂O₃ films with IrO_x metal gate. / Maikap, S.; Banerjee, W.; Li, W. C. et al.
2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009. 2009. p. 378-381 5394664 (2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Memory characteristics of IrOx metal nanocrystals embedded in high- κ Al2O3 films with IrOx metal gate

AU - Maikap, S.

AU - Banerjee, W.

AU - Li, W. C.

AU - Yang, J. R.

PY - 2009

Y1 - 2009

N2 - The memory characteristics of IrOx metal nanocrystals in an n-Si/SiO2/Al2O3/IrOx/Al 2O3/IrOx structure with a small EOT of ∼6 nm have been investigated. The IrOx metal nanocrystals with a small size of ∼3 nm and high-density of ∼0.7×1013/cm 2 have been observed. The enhanced memory characteristics with a large memory window of ΔV-4V at a small gate voltage of <5V and good endurance of 104 cycles are achieved due to the charge storage in the IrOx nanocrystals.

AB - The memory characteristics of IrOx metal nanocrystals in an n-Si/SiO2/Al2O3/IrOx/Al 2O3/IrOx structure with a small EOT of ∼6 nm have been investigated. The IrOx metal nanocrystals with a small size of ∼3 nm and high-density of ∼0.7×1013/cm 2 have been observed. The enhanced memory characteristics with a large memory window of ΔV-4V at a small gate voltage of <5V and good endurance of 104 cycles are achieved due to the charge storage in the IrOx nanocrystals.

KW - AlO

KW - Flash memory

KW - High-κ

KW - IrO nanocrystals

KW - Metal gate

KW - Nanotechnology

KW - Nonvolatile memory

UR - https://www.scopus.com/pages/publications/77950975103

M3 - 会议稿件

AN - SCOPUS:77950975103

SN - 9789810836948

T3 - 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009

SP - 378

EP - 381

BT - 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009

T2 - 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009

Y2 - 26 July 2009 through 30 July 2009

ER -