Abstract
The structural and electrical characteristics of Ni nanocrystals embedded in high- k Hf O2 have been studied. High-resolution transmission electron microscopy revealed the formation of tiny Ni nanocrystals, in the average diameter of ∼8 nm size for the sample annealed at 1000°C for 5 min. Atomic force microscopy shows the deposition of uniform Ni nanocrystals on a Hf O2 layer. A good hysteresis memory window of ∼2.1 V at sweeping gate voltage of ±15 V was observed in optimized annealed samples. A maximum flatband voltage shift of 2.1±0.05 V was accomplished for the optimized sample. The retention and leakage current of the metal oxide semiconductor capacitors were also studied.
Original language | English |
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Pages (from-to) | H7-H10 |
Journal | Electrochemical and Solid-State Letters |
Volume | 12 |
Issue number | 1 |
DOIs | |
State | Published - 2008 |