Metal-oxide-high-k-oxide-silicon memory device using a Ti-doped Dy 2O3 charge-trapping layer and Al2O3 blocking layer

Fa Hsyang Chen*, Tung Ming Pan, Fu Chien Chiu

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

9 Scopus citations

Abstract

In this paper, we propose Al/SiO2/Dy2O 3/SiO2/Si, Al/SiO2/DyTix O y/SiO2/Si}, and Al/Al2 O3/DyTi xOy/SiO2/Si} as charge-trapping memory devices incorporating high-k Dy2O3 and Ti-doped Dy 2O3 films as charge-trapping layers, and SiO2 and Al2O3 films as blocking layers. The Al/Al 2O3/DyTixOy/SiO2/Si memory device exhibited a larger memory window of ∼4.5 V (measured at a sweep voltage range of ±9 V), a smaller charge loss of ∼20% (measured time up to 106 s and at 85 °C), and better endurance (program/erase cycles up to 104) than other devices. These results suggest higher probability for trapping the charge carrier due to the Ti content in the Dy2O3 film, which produce a high dielectric constant and suppress the formation of the Dy-silicate layer, and create a deep trap level in the DyTixOy film.

Original languageEnglish
Article number6029978
Pages (from-to)3847-3851
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume58
Issue number11
DOIs
StatePublished - 11 2011

Keywords

  • AlO
  • DyO
  • Ti-doped DyO
  • charge-trapping layer
  • nonvolatile memory

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