Metal-oxide-high-k-oxide-silicon memory device using a Ti-doped Dy 2O3 charge-trapping layer and Al2O3 blocking layer

Fa Hsyang Chen; Tung Ming Pan; Fu Chien Chiu

doi:10.1109/TED.2011.2165285

Metal-oxide-high-k-oxide-silicon memory device using a Ti-doped Dy ₂O₃ charge-trapping layer and Al₂O₃ blocking layer

Fa Hsyang Chen^*
, Tung Ming Pan
, Fu Chien Chiu

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

10 Scopus citations

Abstract

In this paper, we propose Al/SiO₂/Dy₂O ₃/SiO₂/Si, Al/SiO₂/DyTi_x O _y/SiO₂/Si}, and Al/Al₂ O₃/DyTi _xO_y/SiO₂/Si} as charge-trapping memory devices incorporating high-k Dy₂O₃ and Ti-doped Dy ₂O₃ films as charge-trapping layers, and SiO₂ and Al₂O₃ films as blocking layers. The Al/Al ₂O₃/DyTi_xO_y/SiO₂/Si memory device exhibited a larger memory window of ∼4.5 V (measured at a sweep voltage range of ±9 V), a smaller charge loss of ∼20% (measured time up to 10⁶ s and at 85 °C), and better endurance (program/erase cycles up to 10⁴) than other devices. These results suggest higher probability for trapping the charge carrier due to the Ti content in the Dy₂O₃ film, which produce a high dielectric constant and suppress the formation of the Dy-silicate layer, and create a deep trap level in the DyTi_xO_y film.

Original language	English
Article number	6029978
Pages (from-to)	3847-3851
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	11
DOIs	https://doi.org/10.1109/TED.2011.2165285
State	Published - 11 2011

Keywords

AlO
DyO
Ti-doped DyO
charge-trapping layer
nonvolatile memory

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/TED.2011.2165285

Cite this

@article{1daec5dc932a400fbaf26a6aa8d071c8,

title = "Metal-oxide-high-k-oxide-silicon memory device using a Ti-doped Dy 2O3 charge-trapping layer and Al2O3 blocking layer",

abstract = "In this paper, we propose Al/SiO2/Dy2O 3/SiO2/Si, Al/SiO2/DyTix O y/SiO2/Si\}, and Al/Al2 O3/DyTi xOy/SiO2/Si\} as charge-trapping memory devices incorporating high-k Dy2O3 and Ti-doped Dy 2O3 films as charge-trapping layers, and SiO2 and Al2O3 films as blocking layers. The Al/Al 2O3/DyTixOy/SiO2/Si memory device exhibited a larger memory window of ∼4.5 V (measured at a sweep voltage range of ±9 V), a smaller charge loss of ∼20\% (measured time up to 106 s and at 85 °C), and better endurance (program/erase cycles up to 104) than other devices. These results suggest higher probability for trapping the charge carrier due to the Ti content in the Dy2O3 film, which produce a high dielectric constant and suppress the formation of the Dy-silicate layer, and create a deep trap level in the DyTixOy film.",

keywords = "AlO, DyO, Ti-doped DyO, charge-trapping layer, nonvolatile memory",

author = "Chen, \{Fa Hsyang\} and Pan, \{Tung Ming\} and Chiu, \{Fu Chien\}",

year = "2011",

month = nov,

doi = "10.1109/TED.2011.2165285",

language = "英语",

volume = "58",

pages = "3847--3851",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - Metal-oxide-high-k-oxide-silicon memory device using a Ti-doped Dy 2O3 charge-trapping layer and Al2O3 blocking layer

AU - Chen, Fa Hsyang

AU - Pan, Tung Ming

AU - Chiu, Fu Chien

PY - 2011/11

Y1 - 2011/11

N2 - In this paper, we propose Al/SiO2/Dy2O 3/SiO2/Si, Al/SiO2/DyTix O y/SiO2/Si}, and Al/Al2 O3/DyTi xOy/SiO2/Si} as charge-trapping memory devices incorporating high-k Dy2O3 and Ti-doped Dy 2O3 films as charge-trapping layers, and SiO2 and Al2O3 films as blocking layers. The Al/Al 2O3/DyTixOy/SiO2/Si memory device exhibited a larger memory window of ∼4.5 V (measured at a sweep voltage range of ±9 V), a smaller charge loss of ∼20% (measured time up to 106 s and at 85 °C), and better endurance (program/erase cycles up to 104) than other devices. These results suggest higher probability for trapping the charge carrier due to the Ti content in the Dy2O3 film, which produce a high dielectric constant and suppress the formation of the Dy-silicate layer, and create a deep trap level in the DyTixOy film.

AB - In this paper, we propose Al/SiO2/Dy2O 3/SiO2/Si, Al/SiO2/DyTix O y/SiO2/Si}, and Al/Al2 O3/DyTi xOy/SiO2/Si} as charge-trapping memory devices incorporating high-k Dy2O3 and Ti-doped Dy 2O3 films as charge-trapping layers, and SiO2 and Al2O3 films as blocking layers. The Al/Al 2O3/DyTixOy/SiO2/Si memory device exhibited a larger memory window of ∼4.5 V (measured at a sweep voltage range of ±9 V), a smaller charge loss of ∼20% (measured time up to 106 s and at 85 °C), and better endurance (program/erase cycles up to 104) than other devices. These results suggest higher probability for trapping the charge carrier due to the Ti content in the Dy2O3 film, which produce a high dielectric constant and suppress the formation of the Dy-silicate layer, and create a deep trap level in the DyTixOy film.

KW - AlO

KW - DyO

KW - Ti-doped DyO

KW - charge-trapping layer

KW - nonvolatile memory

UR - https://www.scopus.com/pages/publications/80054903398

U2 - 10.1109/TED.2011.2165285

DO - 10.1109/TED.2011.2165285

M3 - 文章

AN - SCOPUS:80054903398

SN - 0018-9383

VL - 58

SP - 3847

EP - 3851

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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ER -