@inproceedings{62ad04b475b04c8c84d0e6b69a4580fc,
title = "Metal routing induced burn out in GGNMOS ESD protection for low-power DRAM application",
abstract = "With high 110 numbers in low-power DRAM technology, ESD design is limited by on-chip metal routing. An unusual burn out pattern in GGNMOS is found. Failure is driven by metal induced joule heating. Metal routing restriction in GGNMOS is discussed and design guidance is set for low-power DRAM Design.",
author = "Minchen Chang and Lu, \{Tseng Fu\} and Wang, \{Wei Chih\} and Liu, \{Fan Wen\} and Rao, \{Jao Hsiu\} and Liao, \{Wei Ming\} and Yang, \{Chia Ming\} and Lin, \{Jeng Ping\}",
year = "2014",
month = nov,
day = "26",
language = "英语",
series = "Electrical Overstress/Electrostatic Discharge Symposium Proceedings",
publisher = "ESD Association",
number = "November",
booktitle = "Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2014",
edition = "November",
note = "36th International Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2014 ; Conference date: 07-09-2014 Through 12-09-2014",
}