Micromachined CMOS LNA and VCO by CMOS-compatible ICP deep trench technology

Tao Wang; Hsiao Chin Chen; Hung Wei Chiu; Yo Sheng Lin; Guo Wei Huang; Shey Shi Lu

doi:10.1109/TMTT.2005.862715

Micromachined CMOS LNA and VCO by CMOS-compatible ICP deep trench technology

Tao Wang^*, Hsiao Chin Chen, Hung Wei Chiu, Yo Sheng Lin, Guo Wei Huang, Shey Shi Lu

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

83 Scopus citations

Abstract

Selective removal of the silicon underneath the inductors in RF integrated circuits based on inductively coupled plasma (ICP) deep trench technology is demonstrated by a complementary metal-oxide-semiconductor (CMOS) 5-GHz low-noise amplifier (LNA) and a 4-GHz voltage-controlled oscillator (VCO). Design principles of a multistandard LNA with flat and low noise figures (NFs) within a specific frequency range are also presented. A 2-dB increase in peak gain (from 21 to 23 dB) and a 0.5-dB (from 2.28 to 1.78 dB) decrease in minimum NF are achieved in the LNA while a 3-dB suppression of phase noise is obtained in the VCO after the ICP backside dry etching. These results show that the CMOS-process-compatible backside ICP etching technique is very promising for system-on-a-chip applications.

Original language	English
Pages (from-to)	580-588
Number of pages	9
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	54
Issue number	2
DOIs	https://doi.org/10.1109/TMTT.2005.862715
State	Published - 02 2006
Externally published	Yes

Keywords

Complementary metal-oxide-semiconductor (CMOS)
Inductively coupled plasma (ICP)
Low-noise amplifier (LNA)
Voltage-controlled oscillator (VCO)

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10.1109/TMTT.2005.862715

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title = "Micromachined CMOS LNA and VCO by CMOS-compatible ICP deep trench technology",

abstract = "Selective removal of the silicon underneath the inductors in RF integrated circuits based on inductively coupled plasma (ICP) deep trench technology is demonstrated by a complementary metal-oxide-semiconductor (CMOS) 5-GHz low-noise amplifier (LNA) and a 4-GHz voltage-controlled oscillator (VCO). Design principles of a multistandard LNA with flat and low noise figures (NFs) within a specific frequency range are also presented. A 2-dB increase in peak gain (from 21 to 23 dB) and a 0.5-dB (from 2.28 to 1.78 dB) decrease in minimum NF are achieved in the LNA while a 3-dB suppression of phase noise is obtained in the VCO after the ICP backside dry etching. These results show that the CMOS-process-compatible backside ICP etching technique is very promising for system-on-a-chip applications.",

keywords = "Complementary metal-oxide-semiconductor (CMOS), Inductively coupled plasma (ICP), Low-noise amplifier (LNA), Voltage-controlled oscillator (VCO)",

author = "Tao Wang and Chen, {Hsiao Chin} and Chiu, {Hung Wei} and Lin, {Yo Sheng} and Huang, {Guo Wei} and Lu, {Shey Shi}",

year = "2006",

month = feb,

doi = "10.1109/TMTT.2005.862715",

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volume = "54",

pages = "580--588",

journal = "IEEE Transactions on Microwave Theory and Techniques",

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AU - Wang, Tao

AU - Chen, Hsiao Chin

AU - Chiu, Hung Wei

AU - Lin, Yo Sheng

AU - Huang, Guo Wei

AU - Lu, Shey Shi

PY - 2006/2

Y1 - 2006/2

N2 - Selective removal of the silicon underneath the inductors in RF integrated circuits based on inductively coupled plasma (ICP) deep trench technology is demonstrated by a complementary metal-oxide-semiconductor (CMOS) 5-GHz low-noise amplifier (LNA) and a 4-GHz voltage-controlled oscillator (VCO). Design principles of a multistandard LNA with flat and low noise figures (NFs) within a specific frequency range are also presented. A 2-dB increase in peak gain (from 21 to 23 dB) and a 0.5-dB (from 2.28 to 1.78 dB) decrease in minimum NF are achieved in the LNA while a 3-dB suppression of phase noise is obtained in the VCO after the ICP backside dry etching. These results show that the CMOS-process-compatible backside ICP etching technique is very promising for system-on-a-chip applications.

AB - Selective removal of the silicon underneath the inductors in RF integrated circuits based on inductively coupled plasma (ICP) deep trench technology is demonstrated by a complementary metal-oxide-semiconductor (CMOS) 5-GHz low-noise amplifier (LNA) and a 4-GHz voltage-controlled oscillator (VCO). Design principles of a multistandard LNA with flat and low noise figures (NFs) within a specific frequency range are also presented. A 2-dB increase in peak gain (from 21 to 23 dB) and a 0.5-dB (from 2.28 to 1.78 dB) decrease in minimum NF are achieved in the LNA while a 3-dB suppression of phase noise is obtained in the VCO after the ICP backside dry etching. These results show that the CMOS-process-compatible backside ICP etching technique is very promising for system-on-a-chip applications.

KW - Complementary metal-oxide-semiconductor (CMOS)

KW - Inductively coupled plasma (ICP)

KW - Low-noise amplifier (LNA)

KW - Voltage-controlled oscillator (VCO)

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JO - IEEE Transactions on Microwave Theory and Techniques

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IS - 2

ER -

Micromachined CMOS LNA and VCO by CMOS-compatible ICP deep trench technology

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Keywords

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