Micromachined p-GaN gate normally-off power HEMT with an optimized air-bridge matrix layout design

Chih Wei Yang; Hsiang Chun Wang; Hsien Chin Chiu; Chien Kai Tung; Tsung Cheng Chang; Schang Jing Hon

Micromachined p-GaN gate normally-off power HEMT with an optimized air-bridge matrix layout design

Chih Wei Yang, Hsiang Chun Wang, Hsien Chin Chiu, Chien Kai Tung, Tsung Cheng Chang, Schang Jing Hon

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to conference › Conference Paper › peer-review

1 Scopus citations

Abstract

In this work, a micromachined P-GaN power high electron mobility transistor (HEMT) on Si substrate with new air-bridged matrix design was demonstrated. After removal of the Si substrate beneath the P-GaN HEMT, a significant breakdown voltage improvement was observed. The drain and source terminals were arranged as the matrix type and the 3 μm-thick Au was adopted for terminals connection and current redistribution layer of the proposed power cell. Compared with the traditional multi-fingers layout, the current density was improved.

Original language	English
Pages	351-353
Number of pages	3
State	Published - 2015
Event	30th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2015 - Scottsdale, United States Duration: 18 05 2015 → 21 05 2015

Conference

Conference	30th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2015
Country/Territory	United States
City	Scottsdale
Period	18/05/15 → 21/05/15

Keywords

ABM
HEMT
Micromachined
Normally-off
P-GaN

Cite this

@conference{18dfd37599a84a40b8c3f2fba631621c,

title = "Micromachined p-GaN gate normally-off power HEMT with an optimized air-bridge matrix layout design",

abstract = "In this work, a micromachined P-GaN power high electron mobility transistor (HEMT) on Si substrate with new air-bridged matrix design was demonstrated. After removal of the Si substrate beneath the P-GaN HEMT, a significant breakdown voltage improvement was observed. The drain and source terminals were arranged as the matrix type and the 3 μm-thick Au was adopted for terminals connection and current redistribution layer of the proposed power cell. Compared with the traditional multi-fingers layout, the current density was improved.",

keywords = "ABM, HEMT, Micromachined, Normally-off, P-GaN",

author = "Yang, {Chih Wei} and Wang, {Hsiang Chun} and Chiu, {Hsien Chin} and Tung, {Chien Kai} and Chang, {Tsung Cheng} and Hon, {Schang Jing}",

year = "2015",

language = "英语",

pages = "351--353",

note = "30th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2015 ; Conference date: 18-05-2015 Through 21-05-2015",

}

Micromachined p-GaN gate normally-off power HEMT with an optimized air-bridge matrix layout design. / Yang, Chih Wei; Wang, Hsiang Chun; Chiu, Hsien Chin et al.
2015. 351-353 Paper presented at 30th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2015, Scottsdale, United States.

Research output: Contribution to conference › Conference Paper › peer-review

TY - CONF

T1 - Micromachined p-GaN gate normally-off power HEMT with an optimized air-bridge matrix layout design

AU - Yang, Chih Wei

AU - Wang, Hsiang Chun

AU - Chiu, Hsien Chin

AU - Tung, Chien Kai

AU - Chang, Tsung Cheng

AU - Hon, Schang Jing

PY - 2015

Y1 - 2015

N2 - In this work, a micromachined P-GaN power high electron mobility transistor (HEMT) on Si substrate with new air-bridged matrix design was demonstrated. After removal of the Si substrate beneath the P-GaN HEMT, a significant breakdown voltage improvement was observed. The drain and source terminals were arranged as the matrix type and the 3 μm-thick Au was adopted for terminals connection and current redistribution layer of the proposed power cell. Compared with the traditional multi-fingers layout, the current density was improved.

AB - In this work, a micromachined P-GaN power high electron mobility transistor (HEMT) on Si substrate with new air-bridged matrix design was demonstrated. After removal of the Si substrate beneath the P-GaN HEMT, a significant breakdown voltage improvement was observed. The drain and source terminals were arranged as the matrix type and the 3 μm-thick Au was adopted for terminals connection and current redistribution layer of the proposed power cell. Compared with the traditional multi-fingers layout, the current density was improved.

KW - ABM

KW - HEMT

KW - Micromachined

KW - Normally-off

KW - P-GaN

UR - http://www.scopus.com/inward/record.url?scp=85005951103&partnerID=8YFLogxK

M3 - 论文

AN - SCOPUS:85005951103

SP - 351

EP - 353

T2 - 30th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2015

Y2 - 18 May 2015 through 21 May 2015

ER -

Micromachined p-GaN gate normally-off power HEMT with an optimized air-bridge matrix layout design

Abstract

Conference

Keywords

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