Micromachinned monopole antenna by CMOS-Compatible deep trench technology

Tao Wang, Shey Shi Lu*

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review


A monopole antenna fabricated by standard 0.18 μm CMOS technology is post-IC processed by CMOS compatible inductively coupled plasma etching, which can remove the silicon substrate selectively under the metal strips. After substrate release, the resonance of the monopole antenna reveals owing to elimination of the energy confinement from the high-dielectric media. Experimental results show an improvement of input return loss (S11) from-9 to-14.3 dB by such substrate release technique. The power transfer ratio also increases from 0.87 to 0.96 for better radiation efficiency.

Original languageEnglish
Pages (from-to)2971-2973
Number of pages3
JournalMicrowave and Optical Technology Letters
Issue number12
StatePublished - 12 2011


  • CMOS
  • ICP
  • antenna
  • micromachining
  • millimeter wave


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