Microwave noise performance of metamorphic InP/In0.53Ga0.47As/InP DHBT on GaAs substrates

Yong Zhong Xiong; Geok Ing Ng; Hong Wang; Jeffrey S. Fu

doi:10.1002/mop.10303

Microwave noise performance of metamorphic InP/In_0.53Ga_0.47As/InP DHBT on GaAs substrates

Yong Zhong Xiong^*
, Geok Ing Ng
, Hong Wang
, Jeffrey S. Fu

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Journal Article › peer-review

Abstract

The microwave noise performances of metamorphic (MM) InP/In_0.53Ga_0.47As/InP double-heterojunction bipolar transistors (DHBTs) on GaAs substrate are investigated for the first time. The noise figures and associated gains of the device with an emitter size of 5 × 5 μm² are studied in the frequency range of 2-10 GHz. The variations of minimum noise figure at different collector currents are presented. At 2 GHz, the best minimum noise figure (F_MIN) of 2.1 dB with an associated gain (G_ASS) of 12.7 dB have been achieved at V_CE = 1.5 V and I_C = 0.3 mA (1.2 kA/cm²). For comparable size and current density, these results show noise performance comparable to those of reported lattice-matched InP HBT at lower frequency (∼2 GHz).

Original language	English
Pages (from-to)	306-308
Number of pages	3
Journal	Microwave and Optical Technology Letters
Volume	33
Issue number	4
DOIs	https://doi.org/10.1002/mop.10303
State	Published - 20 05 2002
Externally published	Yes

Keywords

DHBT
F
GaAs
HBT
InP/InGaAs
Metamorphic
Noise
Noise figure

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10.1002/mop.10303

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@article{35b56077f4bc47a1a54f5a5d6162a547,

title = "Microwave noise performance of metamorphic InP/In0.53Ga0.47As/InP DHBT on GaAs substrates",

abstract = "The microwave noise performances of metamorphic (MM) InP/In0.53Ga0.47As/InP double-heterojunction bipolar transistors (DHBTs) on GaAs substrate are investigated for the first time. The noise figures and associated gains of the device with an emitter size of 5 × 5 μm2 are studied in the frequency range of 2-10 GHz. The variations of minimum noise figure at different collector currents are presented. At 2 GHz, the best minimum noise figure (FMIN) of 2.1 dB with an associated gain (GASS) of 12.7 dB have been achieved at VCE = 1.5 V and IC = 0.3 mA (1.2 kA/cm2). For comparable size and current density, these results show noise performance comparable to those of reported lattice-matched InP HBT at lower frequency (∼2 GHz).",

keywords = "DHBT, F, GaAs, HBT, InP/InGaAs, Metamorphic, Noise, Noise figure",

author = "Xiong, \{Yong Zhong\} and Ng, \{Geok Ing\} and Hong Wang and Fu, \{Jeffrey S.\}",

year = "2002",

month = may,

day = "20",

doi = "10.1002/mop.10303",

language = "英语",

volume = "33",

pages = "306--308",

journal = "Microwave and Optical Technology Letters",

issn = "0895-2477",

publisher = "John Wiley \& Sons Inc.",

number = "4",

}

TY - JOUR

T1 - Microwave noise performance of metamorphic InP/In0.53Ga0.47As/InP DHBT on GaAs substrates

AU - Xiong, Yong Zhong

AU - Ng, Geok Ing

AU - Wang, Hong

AU - Fu, Jeffrey S.

PY - 2002/5/20

Y1 - 2002/5/20

N2 - The microwave noise performances of metamorphic (MM) InP/In0.53Ga0.47As/InP double-heterojunction bipolar transistors (DHBTs) on GaAs substrate are investigated for the first time. The noise figures and associated gains of the device with an emitter size of 5 × 5 μm2 are studied in the frequency range of 2-10 GHz. The variations of minimum noise figure at different collector currents are presented. At 2 GHz, the best minimum noise figure (FMIN) of 2.1 dB with an associated gain (GASS) of 12.7 dB have been achieved at VCE = 1.5 V and IC = 0.3 mA (1.2 kA/cm2). For comparable size and current density, these results show noise performance comparable to those of reported lattice-matched InP HBT at lower frequency (∼2 GHz).

AB - The microwave noise performances of metamorphic (MM) InP/In0.53Ga0.47As/InP double-heterojunction bipolar transistors (DHBTs) on GaAs substrate are investigated for the first time. The noise figures and associated gains of the device with an emitter size of 5 × 5 μm2 are studied in the frequency range of 2-10 GHz. The variations of minimum noise figure at different collector currents are presented. At 2 GHz, the best minimum noise figure (FMIN) of 2.1 dB with an associated gain (GASS) of 12.7 dB have been achieved at VCE = 1.5 V and IC = 0.3 mA (1.2 kA/cm2). For comparable size and current density, these results show noise performance comparable to those of reported lattice-matched InP HBT at lower frequency (∼2 GHz).

KW - DHBT

KW - F

KW - GaAs

KW - HBT

KW - InP/InGaAs

KW - Metamorphic

KW - Noise

KW - Noise figure

UR - https://www.scopus.com/pages/publications/0037140674

U2 - 10.1002/mop.10303

DO - 10.1002/mop.10303

M3 - 文章

AN - SCOPUS:0037140674

SN - 0895-2477

VL - 33

SP - 306

EP - 308

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 4

ER -

Microwave noise performance of metamorphic InP/In_0.53Ga_0.47As/InP DHBT on GaAs substrates

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Keywords

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