MILC-TFT with high-κ dielectrics for one-time-programmable memory application

Tsung Yu Chiang; Ming Wen Ma; Yi Hong Wu; Po Yi Kuo; Kuan Ti Wang; Chia Chun Liao; Chi Ruei Yeh; Tien Sheng Chao

doi:10.1109/LED.2009.2027035

MILC-TFT with high-κ dielectrics for one-time-programmable memory application

Tsung Yu Chiang^*
, Ming Wen Ma
, Yi Hong Wu
, Po Yi Kuo
, Kuan Ti Wang
, Chia Chun Liao
, Chi Ruei Yeh
, Tien Sheng Chao

^*Corresponding author for this work

National Yang Ming Chiao Tung University

Research output: Contribution to journal › Journal Article › peer-review

6 Scopus citations

Abstract

In this letter, for the first time, one-time-programmable (OTP) memory fabricated on the low-temperature poly-Si p-channel thin-film transistor (TFT) with metal-induced lateral-crystallization channel layer and high-κ dielectrics is demonstrated. The state of this OTP memory can be identified by the scheme of gate-induced drain leakage current measurement. The OTP-TFT memory has good electrical characteristics in terms of low threshold voltage V_th ∼ -0.78 V, excellent subthreshold swing ∼105 mV/dec, low operation voltage, faster programming speeds, and excellent reliability characteristics.

Original language	English
Pages (from-to)	954-956
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	9
DOIs	https://doi.org/10.1109/LED.2009.2027035
State	Published - 2009
Externally published	Yes

Keywords

Gate-induced drain leakage (GIDL)
Metalinduced lateral crystallization (MILC)
One-time programmable (OTP)
Thin-film transistor (TFT)

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10.1109/LED.2009.2027035

Cite this

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title = "MILC-TFT with high-κ dielectrics for one-time-programmable memory application",

abstract = "In this letter, for the first time, one-time-programmable (OTP) memory fabricated on the low-temperature poly-Si p-channel thin-film transistor (TFT) with metal-induced lateral-crystallization channel layer and high-κ dielectrics is demonstrated. The state of this OTP memory can be identified by the scheme of gate-induced drain leakage current measurement. The OTP-TFT memory has good electrical characteristics in terms of low threshold voltage Vth ∼ -0.78 V, excellent subthreshold swing ∼105 mV/dec, low operation voltage, faster programming speeds, and excellent reliability characteristics.",

keywords = "Gate-induced drain leakage (GIDL), Metalinduced lateral crystallization (MILC), One-time programmable (OTP), Thin-film transistor (TFT)",

author = "Chiang, \{Tsung Yu\} and Ma, \{Ming Wen\} and Wu, \{Yi Hong\} and Kuo, \{Po Yi\} and Wang, \{Kuan Ti\} and Liao, \{Chia Chun\} and Yeh, \{Chi Ruei\} and Chao, \{Tien Sheng\}",

year = "2009",

doi = "10.1109/LED.2009.2027035",

language = "英语",

volume = "30",

pages = "954--956",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - MILC-TFT with high-κ dielectrics for one-time-programmable memory application

AU - Chiang, Tsung Yu

AU - Ma, Ming Wen

AU - Wu, Yi Hong

AU - Kuo, Po Yi

AU - Wang, Kuan Ti

AU - Liao, Chia Chun

AU - Yeh, Chi Ruei

AU - Chao, Tien Sheng

PY - 2009

Y1 - 2009

N2 - In this letter, for the first time, one-time-programmable (OTP) memory fabricated on the low-temperature poly-Si p-channel thin-film transistor (TFT) with metal-induced lateral-crystallization channel layer and high-κ dielectrics is demonstrated. The state of this OTP memory can be identified by the scheme of gate-induced drain leakage current measurement. The OTP-TFT memory has good electrical characteristics in terms of low threshold voltage Vth ∼ -0.78 V, excellent subthreshold swing ∼105 mV/dec, low operation voltage, faster programming speeds, and excellent reliability characteristics.

AB - In this letter, for the first time, one-time-programmable (OTP) memory fabricated on the low-temperature poly-Si p-channel thin-film transistor (TFT) with metal-induced lateral-crystallization channel layer and high-κ dielectrics is demonstrated. The state of this OTP memory can be identified by the scheme of gate-induced drain leakage current measurement. The OTP-TFT memory has good electrical characteristics in terms of low threshold voltage Vth ∼ -0.78 V, excellent subthreshold swing ∼105 mV/dec, low operation voltage, faster programming speeds, and excellent reliability characteristics.

KW - Gate-induced drain leakage (GIDL)

KW - Metalinduced lateral crystallization (MILC)

KW - One-time programmable (OTP)

KW - Thin-film transistor (TFT)

UR - https://www.scopus.com/pages/publications/69949130842

U2 - 10.1109/LED.2009.2027035

DO - 10.1109/LED.2009.2027035

M3 - 文章

AN - SCOPUS:69949130842

SN - 0741-3106

VL - 30

SP - 954

EP - 956

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -

MILC-TFT with high-κ dielectrics for one-time-programmable memory application

Abstract

Keywords

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