Minor magnesium doping in P-type layer of InGaN/GaN MQW LED to enhance electrical and optical properties

Meng Fu Shih; Yung Hsiang Lin; Chun Wei Liao; Cheng Ying Yen; Yi Lun Chou; Ray Ming Lin

doi:10.1109/ISDRS.2007.4422553

Minor magnesium doping in P-type layer of InGaN/GaN MQW LED to enhance electrical and optical properties

Meng Fu Shih^*
, Yung Hsiang Lin
, Chun Wei Liao
, Cheng Ying Yen
, Yi Lun Chou
, Ray Ming Lin

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422553
State	Published - 2007
Event	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States Duration: 12 12 2007 → 14 12 2007

Publication series

Name	2007 International Semiconductor Device Research Symposium, ISDRS

Conference

Conference	2007 International Semiconductor Device Research Symposium, ISDRS
Country/Territory	United States
City	College Park, MD
Period	12/12/07 → 14/12/07

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10.1109/ISDRS.2007.4422553

Cite this

Shih, M. F., Lin, Y. H., Liao, C. W., Yen, C. Y., Chou, Y. L., & Lin, R. M. (2007). Minor magnesium doping in P-type layer of InGaN/GaN MQW LED to enhance electrical and optical properties. In 2007 International Semiconductor Device Research Symposium, ISDRS Article 4422553 (2007 International Semiconductor Device Research Symposium, ISDRS). https://doi.org/10.1109/ISDRS.2007.4422553

@inproceedings{d2f9aa1eacbf40a8aa1346489069b7c9,

title = "Minor magnesium doping in P-type layer of InGaN/GaN MQW LED to enhance electrical and optical properties",

author = "Shih, \{Meng Fu\} and Lin, \{Yung Hsiang\} and Liao, \{Chun Wei\} and Yen, \{Cheng Ying\} and Chou, \{Yi Lun\} and Lin, \{Ray Ming\}",

year = "2007",

doi = "10.1109/ISDRS.2007.4422553",

language = "英语",

isbn = "1424418917",

series = "2007 International Semiconductor Device Research Symposium, ISDRS",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

note = "2007 International Semiconductor Device Research Symposium, ISDRS ; Conference date: 12-12-2007 Through 14-12-2007",

}

Shih, MF, Lin, YH, Liao, CW, Yen, CY, Chou, YL & Lin, RM 2007, Minor magnesium doping in P-type layer of InGaN/GaN MQW LED to enhance electrical and optical properties. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422553, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422553

Minor magnesium doping in P-type layer of InGaN/GaN MQW LED to enhance electrical and optical properties. / Shih, Meng Fu; Lin, Yung Hsiang; Liao, Chun Wei et al.
2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422553 (2007 International Semiconductor Device Research Symposium, ISDRS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Minor magnesium doping in P-type layer of InGaN/GaN MQW LED to enhance electrical and optical properties

AU - Shih, Meng Fu

AU - Lin, Yung Hsiang

AU - Liao, Chun Wei

AU - Yen, Cheng Ying

AU - Chou, Yi Lun

AU - Lin, Ray Ming

PY - 2007

Y1 - 2007

UR - https://www.scopus.com/pages/publications/45149112331

U2 - 10.1109/ISDRS.2007.4422553

DO - 10.1109/ISDRS.2007.4422553

M3 - 会议稿件

AN - SCOPUS:45149112331

SN - 1424418917

SN - 9781424418916

T3 - 2007 International Semiconductor Device Research Symposium, ISDRS

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

T2 - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007

ER -

Minor magnesium doping in P-type layer of InGaN/GaN MQW LED to enhance electrical and optical properties

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