Minority carrier lifetime and diffusion length in Si1-x-yGexCy heterolayers

S. K. Samanta; S. Maikap; S. Chatterjee; C. K. Maiti

doi:10.1016/S0038-1101(02)00445-8

Minority carrier lifetime and diffusion length in Si_1-x-yGe_xC_y heterolayers

S. K. Samanta
, S. Maikap
, S. Chatterjee
, C. K. Maiti

Indian Institute of Technology Kharagpur

Research output: Contribution to journal › Journal Article › peer-review

10 Scopus citations

Abstract

The minority carrier lifetime and diffusion length have been measured in partially strain-compensated Si_0.795Ge_0.2C_0.005 layers grown using ultrahigh vacuum chemical vapor deposition. A minority carrier lifetime greater than 1 μs has been observed. The data indicate that the minority carrier lifetimes are degraded due to carbon incorporation.

Original language	English
Pages (from-to)	893-897
Number of pages	5
Journal	Solid-State Electronics
Volume	47
Issue number	5
DOIs	https://doi.org/10.1016/S0038-1101(02)00445-8
State	Published - 05 2003
Externally published	Yes

Keywords

Diffusion length
Generation lifetime
Silicon germanium carbon (SiGeC)

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10.1016/S0038-1101(02)00445-8

Cite this

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title = "Minority carrier lifetime and diffusion length in Si1-x-yGexCy heterolayers",

abstract = "The minority carrier lifetime and diffusion length have been measured in partially strain-compensated Si0.795Ge0.2C0.005 layers grown using ultrahigh vacuum chemical vapor deposition. A minority carrier lifetime greater than 1 μs has been observed. The data indicate that the minority carrier lifetimes are degraded due to carbon incorporation.",

keywords = "Diffusion length, Generation lifetime, Silicon germanium carbon (SiGeC)",

author = "Samanta, \{S. K.\} and S. Maikap and S. Chatterjee and Maiti, \{C. K.\}",

year = "2003",

month = may,

doi = "10.1016/S0038-1101(02)00445-8",

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AU - Samanta, S. K.

AU - Maikap, S.

AU - Chatterjee, S.

AU - Maiti, C. K.

PY - 2003/5

Y1 - 2003/5

N2 - The minority carrier lifetime and diffusion length have been measured in partially strain-compensated Si0.795Ge0.2C0.005 layers grown using ultrahigh vacuum chemical vapor deposition. A minority carrier lifetime greater than 1 μs has been observed. The data indicate that the minority carrier lifetimes are degraded due to carbon incorporation.

AB - The minority carrier lifetime and diffusion length have been measured in partially strain-compensated Si0.795Ge0.2C0.005 layers grown using ultrahigh vacuum chemical vapor deposition. A minority carrier lifetime greater than 1 μs has been observed. The data indicate that the minority carrier lifetimes are degraded due to carbon incorporation.

KW - Diffusion length

KW - Generation lifetime

KW - Silicon germanium carbon (SiGeC)

UR - https://www.scopus.com/pages/publications/0037408466

U2 - 10.1016/S0038-1101(02)00445-8

DO - 10.1016/S0038-1101(02)00445-8

M3 - 文章

AN - SCOPUS:0037408466

SN - 0038-1101

VL - 47

SP - 893

EP - 897

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 5

ER -

Minority carrier lifetime and diffusion length in Si_1-x-yGe_xC_y heterolayers

Abstract

Keywords

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