Modeling Charge Injection in MOS Analog Switches

Bing J. Sheu; Je Hurn Shieh; Mahesh Patil

doi:10.1109/TCS.1987.1086096

Modeling Charge Injection in MOS Analog Switches

Bing J. Sheu, Je Hurn Shieh, Mahesh Patil

University of Southern California

Research output: Contribution to journal › Journal Article › peer-review

36 Scopus citations

Abstract

—Charge injection in MOS switches has been analyzed. The analysis has been extended to the general case of including source resistance and source capacitance. Universal plots of percentage channel charge injected are presented. Normalized variables are used to facilitate usage of the plots. A small-geometry switch, slow switching rate, and small source resistance can help reduce the charge injection effect.

Original language	English
Pages (from-to)	214-216
Number of pages	3
Journal	IEEE Transactions on Circuits and Systems
Volume	34
Issue number	2
DOIs	https://doi.org/10.1109/TCS.1987.1086096
State	Published - 02 1987
Externally published	Yes

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10.1109/TCS.1987.1086096

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title = "Modeling Charge Injection in MOS Analog Switches",

abstract = "—Charge injection in MOS switches has been analyzed. The analysis has been extended to the general case of including source resistance and source capacitance. Universal plots of percentage channel charge injected are presented. Normalized variables are used to facilitate usage of the plots. A small-geometry switch, slow switching rate, and small source resistance can help reduce the charge injection effect.",

author = "Sheu, {Bing J.} and Shieh, {Je Hurn} and Mahesh Patil",

year = "1987",

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AU - Shieh, Je Hurn

AU - Patil, Mahesh

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N2 - —Charge injection in MOS switches has been analyzed. The analysis has been extended to the general case of including source resistance and source capacitance. Universal plots of percentage channel charge injected are presented. Normalized variables are used to facilitate usage of the plots. A small-geometry switch, slow switching rate, and small source resistance can help reduce the charge injection effect.

AB - —Charge injection in MOS switches has been analyzed. The analysis has been extended to the general case of including source resistance and source capacitance. Universal plots of percentage channel charge injected are presented. Normalized variables are used to facilitate usage of the plots. A small-geometry switch, slow switching rate, and small source resistance can help reduce the charge injection effect.

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U2 - 10.1109/TCS.1987.1086096

DO - 10.1109/TCS.1987.1086096

M3 - 文章

AN - SCOPUS:0023292124

SN - 0098-4094

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SP - 214

EP - 216

JO - IEEE Transactions on Circuits and Systems

JF - IEEE Transactions on Circuits and Systems

IS - 2

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Modeling Charge Injection in MOS Analog Switches

Abstract

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