Modification of ag8sns6 photoanodes with incorporation of zn ions for photo-driven hydrogen production

Lin Ya Yeh; Kong Wei Cheng

doi:10.3390/catal11030363

Modification of ag8sns6 photoanodes with incorporation of zn ions for photo-driven hydrogen production

Lin Ya Yeh, Kong Wei Cheng^*

^*Corresponding author for this work

Department of Chemical and Materials Engineering

Research output: Contribution to journal › Journal Article › peer-review

7 Scopus citations

Abstract

In this study, Zn ions were incorporated into Ag8SnS6 thin films on glass and indium–tin– oxide-coated glass substrates using chemical bath deposition. Detailed procedures for the growth of Ag–Zn–Sn–S semiconductor films and their optical, physical and photoelectrochemical performances were investigated. X-ray diffraction patterns of samples revealed that kesterite Ag2ZnSnS4 phase with a certain amount of Ag8SnS6 phase can be obtained using ethylenediaminetetraacetic acid disodium salt and trisodium citrate as the chelating agent couples. Images of field-emission scanning electron microscope showed that plate-like microstructures with some spherical aggre-gates were observed for the sample at low Zn content. It changed to irregular spherical grains with the [Zn]/[Sn] ratios being higher than 0.95 in samples. The energy band gaps of the samples were in the range of 1.57–2.61 eV, depending on the [Zn]/[Sn] molar ratio in sample. From the Hall meas-urements, the carrier concentrations and mobilities of samples were in the ranges of 6.57 × 10¹²– 1.76×10¹⁴ cm⁻³ and 7.14–39.22 cm²/V·s, respectively. All samples were n-type semiconductors. The maximum photoelectrochemical performance of sample was 1.38 mA/cm² in aqueous 0.25 M K2SO3 and 0.35 M Na2S solutions.

Original language	English
Article number	363
Pages (from-to)	1-15
Number of pages	15
Journal	Catalysts
Volume	11
Issue number	3
DOIs	https://doi.org/10.3390/catal11030363
State	Published - 03 2021

Bibliographical note

Publisher Copyright:
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.

Keywords

Hall measure-ment
Hydrogen production
Metal sulfide
Optical properties
Photoelectrochemical performance

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.3390/catal11030363

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title = "Modification of ag8sns6 photoanodes with incorporation of zn ions for photo-driven hydrogen production",

abstract = "In this study, Zn ions were incorporated into Ag8SnS6 thin films on glass and indium–tin– oxide-coated glass substrates using chemical bath deposition. Detailed procedures for the growth of Ag–Zn–Sn–S semiconductor films and their optical, physical and photoelectrochemical performances were investigated. X-ray diffraction patterns of samples revealed that kesterite Ag2ZnSnS4 phase with a certain amount of Ag8SnS6 phase can be obtained using ethylenediaminetetraacetic acid disodium salt and trisodium citrate as the chelating agent couples. Images of field-emission scanning electron microscope showed that plate-like microstructures with some spherical aggre-gates were observed for the sample at low Zn content. It changed to irregular spherical grains with the [Zn]/[Sn] ratios being higher than 0.95 in samples. The energy band gaps of the samples were in the range of 1.57–2.61 eV, depending on the [Zn]/[Sn] molar ratio in sample. From the Hall meas-urements, the carrier concentrations and mobilities of samples were in the ranges of 6.57 × 1012– 1.76×1014 cm−3 and 7.14–39.22 cm2/V·s, respectively. All samples were n-type semiconductors. The maximum photoelectrochemical performance of sample was 1.38 mA/cm2 in aqueous 0.25 M K2SO3 and 0.35 M Na2S solutions.",

keywords = "Hall measure-ment, Hydrogen production, Metal sulfide, Optical properties, Photoelectrochemical performance",

author = "Yeh, {Lin Ya} and Cheng, {Kong Wei}",

note = "Publisher Copyright: {\textcopyright} 2021 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2021",

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doi = "10.3390/catal11030363",

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AU - Yeh, Lin Ya

AU - Cheng, Kong Wei

PY - 2021/3

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N2 - In this study, Zn ions were incorporated into Ag8SnS6 thin films on glass and indium–tin– oxide-coated glass substrates using chemical bath deposition. Detailed procedures for the growth of Ag–Zn–Sn–S semiconductor films and their optical, physical and photoelectrochemical performances were investigated. X-ray diffraction patterns of samples revealed that kesterite Ag2ZnSnS4 phase with a certain amount of Ag8SnS6 phase can be obtained using ethylenediaminetetraacetic acid disodium salt and trisodium citrate as the chelating agent couples. Images of field-emission scanning electron microscope showed that plate-like microstructures with some spherical aggre-gates were observed for the sample at low Zn content. It changed to irregular spherical grains with the [Zn]/[Sn] ratios being higher than 0.95 in samples. The energy band gaps of the samples were in the range of 1.57–2.61 eV, depending on the [Zn]/[Sn] molar ratio in sample. From the Hall meas-urements, the carrier concentrations and mobilities of samples were in the ranges of 6.57 × 1012– 1.76×1014 cm−3 and 7.14–39.22 cm2/V·s, respectively. All samples were n-type semiconductors. The maximum photoelectrochemical performance of sample was 1.38 mA/cm2 in aqueous 0.25 M K2SO3 and 0.35 M Na2S solutions.

AB - In this study, Zn ions were incorporated into Ag8SnS6 thin films on glass and indium–tin– oxide-coated glass substrates using chemical bath deposition. Detailed procedures for the growth of Ag–Zn–Sn–S semiconductor films and their optical, physical and photoelectrochemical performances were investigated. X-ray diffraction patterns of samples revealed that kesterite Ag2ZnSnS4 phase with a certain amount of Ag8SnS6 phase can be obtained using ethylenediaminetetraacetic acid disodium salt and trisodium citrate as the chelating agent couples. Images of field-emission scanning electron microscope showed that plate-like microstructures with some spherical aggre-gates were observed for the sample at low Zn content. It changed to irregular spherical grains with the [Zn]/[Sn] ratios being higher than 0.95 in samples. The energy band gaps of the samples were in the range of 1.57–2.61 eV, depending on the [Zn]/[Sn] molar ratio in sample. From the Hall meas-urements, the carrier concentrations and mobilities of samples were in the ranges of 6.57 × 1012– 1.76×1014 cm−3 and 7.14–39.22 cm2/V·s, respectively. All samples were n-type semiconductors. The maximum photoelectrochemical performance of sample was 1.38 mA/cm2 in aqueous 0.25 M K2SO3 and 0.35 M Na2S solutions.

KW - Hall measure-ment

KW - Hydrogen production

KW - Metal sulfide

KW - Optical properties

KW - Photoelectrochemical performance

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ER -

Modification of ag8sns6 photoanodes with incorporation of zn ions for photo-driven hydrogen production

Abstract

Bibliographical note

Keywords

UN SDGs

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