@inproceedings{961ce4c1be314d9f982958bb74048046,
title = "Modulation of the electrical characteristics of HfOx/TiN RRAM devices through the top electrode metal",
abstract = "The effect of the top electrode on switching characteristics of a HfOx/TiN structure was investigated. From the electrical conduction analysis, the conduction mechanism between Pt and Ti was found to be quite different. A potential barrier formed in the Pt/HfOx interface showing the Fowler-Nordheim tunneling at high bias. However, it was not observed in the Ti/HfOx structure. Reactive metal Ti interacted with the underlying HfOx film leading to destruction of the barrier height. As such, the device lost the ability to operate at the μA compliance current range. Pt/HfOx demonstrated the merit of a large resistance ratio and a low operation current (Ireset = 20 μA). However, Ti/HfOx exhibited better voltage dispersion at the low resistance state (0.5V dispersion). The electrode plays a dominant role in determining the electrical characteristics of a resistive random access memory (RRAM) device. Therefore, choosing an adequate electrode for RRAM is an important consideration.",
author = "Chang, {K. M.} and Tzeng, {W. H.} and Liu, {K. C.} and Lai, {W. R.}",
year = "2010",
doi = "10.1149/1.3372569",
language = "英语",
isbn = "9781566777926",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "119--126",
booktitle = "Dielectrics for Nanosystems 4",
edition = "2",
}