Molecular-beam epitaxial growth of InxAl1-xAs on GaAs

Jen Inn Chyi; Jia Lin Shieh; Ray Ming Lin; Tzer En Nee; Jen Wei Pan

doi:10.1063/1.112273

Molecular-beam epitaxial growth of In_xAl_1-xAs on GaAs

Jen Inn Chyi^*, Jia Lin Shieh, Ray Ming Lin, Tzer En Nee, Jen Wei Pan

^*Corresponding author for this work

National Central University

Research output: Contribution to journal › Journal Article › peer-review

4 Scopus citations

Abstract

The surface reconstruction of InAlAs on GaAs between 490 and 700°C has been investigated during molecular-beam epitaxial growth. It is found that the surface reconstruction of InAlAs is similar to that of AlGaAs alloy. The (2×1) and (1×1) surfaces occur at a substrate temperature between 490 and 650°C, while at a temperature above 650°C, the ordered As-stabilized (3×2 surface appeared during the steady-state growth. InAlAs/GaAs heteroepitaxial layers have been analyzed and reveal that the residual strain in the epilayers is strongly dependent on the composition as well as the thickness of the epilayer. These characteristics are consistent with the InGaAs/GaAs system.

Original language	English
Pages (from-to)	699-701
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	6
DOIs	https://doi.org/10.1063/1.112273
State	Published - 1994
Externally published	Yes

Access to Document

10.1063/1.112273

Cite this

@article{4f08fc9c3ad44d7fae84d574613bbbec,

title = "Molecular-beam epitaxial growth of InxAl1-xAs on GaAs",

abstract = "The surface reconstruction of InAlAs on GaAs between 490 and 700°C has been investigated during molecular-beam epitaxial growth. It is found that the surface reconstruction of InAlAs is similar to that of AlGaAs alloy. The (2×1) and (1×1) surfaces occur at a substrate temperature between 490 and 650°C, while at a temperature above 650°C, the ordered As-stabilized (3×2 surface appeared during the steady-state growth. InAlAs/GaAs heteroepitaxial layers have been analyzed and reveal that the residual strain in the epilayers is strongly dependent on the composition as well as the thickness of the epilayer. These characteristics are consistent with the InGaAs/GaAs system.",

author = "Chyi, {Jen Inn} and Shieh, {Jia Lin} and Lin, {Ray Ming} and Nee, {Tzer En} and Pan, {Jen Wei}",

year = "1994",

doi = "10.1063/1.112273",

language = "英语",

volume = "65",

pages = "699--701",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Molecular-beam epitaxial growth of InxAl1-xAs on GaAs

AU - Chyi, Jen Inn

AU - Shieh, Jia Lin

AU - Lin, Ray Ming

AU - Nee, Tzer En

AU - Pan, Jen Wei

PY - 1994

Y1 - 1994

N2 - The surface reconstruction of InAlAs on GaAs between 490 and 700°C has been investigated during molecular-beam epitaxial growth. It is found that the surface reconstruction of InAlAs is similar to that of AlGaAs alloy. The (2×1) and (1×1) surfaces occur at a substrate temperature between 490 and 650°C, while at a temperature above 650°C, the ordered As-stabilized (3×2 surface appeared during the steady-state growth. InAlAs/GaAs heteroepitaxial layers have been analyzed and reveal that the residual strain in the epilayers is strongly dependent on the composition as well as the thickness of the epilayer. These characteristics are consistent with the InGaAs/GaAs system.

AB - The surface reconstruction of InAlAs on GaAs between 490 and 700°C has been investigated during molecular-beam epitaxial growth. It is found that the surface reconstruction of InAlAs is similar to that of AlGaAs alloy. The (2×1) and (1×1) surfaces occur at a substrate temperature between 490 and 650°C, while at a temperature above 650°C, the ordered As-stabilized (3×2 surface appeared during the steady-state growth. InAlAs/GaAs heteroepitaxial layers have been analyzed and reveal that the residual strain in the epilayers is strongly dependent on the composition as well as the thickness of the epilayer. These characteristics are consistent with the InGaAs/GaAs system.

UR - http://www.scopus.com/inward/record.url?scp=3943066683&partnerID=8YFLogxK

U2 - 10.1063/1.112273

DO - 10.1063/1.112273

M3 - 文章

AN - SCOPUS:3943066683

SN - 0003-6951

VL - 65

SP - 699

EP - 701

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Molecular-beam epitaxial growth of In_xAl_1-xAs on GaAs

Abstract

Access to Document

Other files and links

Fingerprint

Cite this