Monolithic microwave AlGaAs/InGaAs doped-channel fet switches

L. W. Ke; Y. J. Chan; Y. C. Chiang

doi:10.1002/(SICI)1098-2760(199609)13:1<47::AID-MOP16>3.0.CO;2-2

Monolithic microwave AlGaAs/InGaAs doped-channel fet switches

L. W. Ke^*, Y. J. Chan, Y. C. Chiang

^*Corresponding author for this work

Department of Electronic Engineering

National Central University

Research output: Contribution to journal › Journal Article › peer-review

6 Scopus citations

Abstract

AlGaAs/InGaAs heterostructure doped-channel FETs were used to fabricate a monolithic microwave front-end switch. The gate width of FETs were characterized to obtain an optimum condition to achieve better microwave performance. An insertion loss lower than 1 dB together with an isolation higher than 20 dB can be realized in this monolithic switch at a frequency below 3 GHz.

Original language	English
Pages (from-to)	47-49
Number of pages	3
Journal	Microwave and Optical Technology Letters
Volume	13
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1098-2760(199609)13:1<47::AID-MOP16>3.0.CO;2-2
State	Published - 09 1996

Keywords

FET switches
MESFETs
Monolithic integrated circuits

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10.1002/(SICI)1098-2760(199609)13:1<47::AID-MOP16>3.0.CO;2-2

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title = "Monolithic microwave AlGaAs/InGaAs doped-channel fet switches",

abstract = "AlGaAs/InGaAs heterostructure doped-channel FETs were used to fabricate a monolithic microwave front-end switch. The gate width of FETs were characterized to obtain an optimum condition to achieve better microwave performance. An insertion loss lower than 1 dB together with an isolation higher than 20 dB can be realized in this monolithic switch at a frequency below 3 GHz.",

keywords = "FET switches, MESFETs, Monolithic integrated circuits",

author = "Ke, \{L. W.\} and Chan, \{Y. J.\} and Chiang, \{Y. C.\}",

year = "1996",

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doi = "10.1002/(SICI)1098-2760(199609)13:1<47::AID-MOP16>3.0.CO;2-2",

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AU - Ke, L. W.

AU - Chan, Y. J.

AU - Chiang, Y. C.

PY - 1996/9

Y1 - 1996/9

N2 - AlGaAs/InGaAs heterostructure doped-channel FETs were used to fabricate a monolithic microwave front-end switch. The gate width of FETs were characterized to obtain an optimum condition to achieve better microwave performance. An insertion loss lower than 1 dB together with an isolation higher than 20 dB can be realized in this monolithic switch at a frequency below 3 GHz.

AB - AlGaAs/InGaAs heterostructure doped-channel FETs were used to fabricate a monolithic microwave front-end switch. The gate width of FETs were characterized to obtain an optimum condition to achieve better microwave performance. An insertion loss lower than 1 dB together with an isolation higher than 20 dB can be realized in this monolithic switch at a frequency below 3 GHz.

KW - FET switches

KW - MESFETs

KW - Monolithic integrated circuits

UR - https://www.scopus.com/pages/publications/0030241122

U2 - 10.1002/(SICI)1098-2760(199609)13:1<47::AID-MOP16>3.0.CO;2-2

DO - 10.1002/(SICI)1098-2760(199609)13:1<47::AID-MOP16>3.0.CO;2-2

M3 - 文章

AN - SCOPUS:0030241122

SN - 0895-2477

VL - 13

SP - 47

EP - 49

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 1

ER -

Monolithic microwave AlGaAs/InGaAs doped-channel fet switches

Abstract

Keywords

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