Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications

Chong Rong Huang; Hsien Chin Chiu; Chia Hao Liu; Hsiang Chun Wang; Hsuan Ling Kao; Ming Chin Chen; Chia Cheng Liu; Vladimir Odnoblyudov

Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications

Chong Rong Huang
, Hsien Chin Chiu^*
, Chia Hao Liu
, Hsiang Chun Wang
, Hsuan Ling Kao
, Ming Chin Chen
, Chia Cheng Liu
, Vladimir Odnoblyudov

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University
Unikorn Semiconductor Corporation
Inc.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This is the first comprehensive study on monolithically integrated GaN power and radio frequency (RF) integrated circuits (ICs) on GaN-on-poly-AlN (QST^TM) substrates. GaN power and RF ICs integration was feasible due to the reduced parasitics, thermally matched substrate of poly-AlN, high thermal conductivity, high mechanical strength, as well as the optimized GaN layer structure designs. The E/D-mode GaN low-voltage logic device and E-mode power device were realized to implement the soft-switching buck-converter. A 0.25-μm gate length T-shaped gate GaN RF high-electron-mobility transistor was adopted for the high-output power stage. Monolithically integrated GaN power and RF ICs on QST substrates results in a feasible single envelope-tracking power-amplifier chip with high thermal stability.

Original language	English
Title of host publication	CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers
Publisher	CS Mantech
Pages	71-74
Number of pages	4
ISBN (Electronic)	9781893580312
State	Published - 2021
Event	35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021 - Orlando, Virtual, United States Duration: 24 05 2021 → 27 05 2021

Publication series

Name	CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

Conference

Conference	35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021
Country/Territory	United States
City	Orlando, Virtual
Period	24/05/21 → 27/05/21

Bibliographical note

Publisher Copyright:
© 2021 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. All Rights Reserved.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Keywords

Back barrier (B/B) layer
High thermal conductivity
QST substrate

Cite this

Huang, C. R., Chiu, H. C., Liu, C. H., Wang, H. C., Kao, H. L., Chen, M. C., Liu, C. C., & Odnoblyudov, V. (2021). Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications. In CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers (pp. 71-74). (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers). CS Mantech.

Huang, Chong Rong ; Chiu, Hsien Chin ; Liu, Chia Hao et al. / Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications. CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech, 2021. pp. 71-74 (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

@inproceedings{be44a60e7a864143b323f84884f31f34,

title = "Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications",

abstract = "This is the first comprehensive study on monolithically integrated GaN power and radio frequency (RF) integrated circuits (ICs) on GaN-on-poly-AlN (QSTTM) substrates. GaN power and RF ICs integration was feasible due to the reduced parasitics, thermally matched substrate of poly-AlN, high thermal conductivity, high mechanical strength, as well as the optimized GaN layer structure designs. The E/D-mode GaN low-voltage logic device and E-mode power device were realized to implement the soft-switching buck-converter. A 0.25-μm gate length T-shaped gate GaN RF high-electron-mobility transistor was adopted for the high-output power stage. Monolithically integrated GaN power and RF ICs on QST substrates results in a feasible single envelope-tracking power-amplifier chip with high thermal stability.",

keywords = "Back barrier (B/B) layer, High thermal conductivity, QST substrate",

author = "Huang, \{Chong Rong\} and Chiu, \{Hsien Chin\} and Liu, \{Chia Hao\} and Wang, \{Hsiang Chun\} and Kao, \{Hsuan Ling\} and Chen, \{Ming Chin\} and Liu, \{Chia Cheng\} and Vladimir Odnoblyudov",

note = "Publisher Copyright: {\textcopyright} 2021 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. All Rights Reserved.; 35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021 ; Conference date: 24-05-2021 Through 27-05-2021",

year = "2021",

language = "英语",

series = "CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers",

publisher = "CS Mantech",

pages = "71--74",

booktitle = "CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers",

}

Huang, CR, Chiu, HC, Liu, CH, Wang, HC, Kao, HL, Chen, MC, Liu, CC & Odnoblyudov, V 2021, Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications. in CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers, CS Mantech, pp. 71-74, 35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021, Orlando, Virtual, United States, 24/05/21.

Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications. / Huang, Chong Rong; Chiu, Hsien Chin; Liu, Chia Hao et al.
CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech, 2021. p. 71-74 (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications

AU - Huang, Chong Rong

AU - Chiu, Hsien Chin

AU - Liu, Chia Hao

AU - Wang, Hsiang Chun

AU - Kao, Hsuan Ling

AU - Chen, Ming Chin

AU - Liu, Chia Cheng

AU - Odnoblyudov, Vladimir

PY - 2021

Y1 - 2021

N2 - This is the first comprehensive study on monolithically integrated GaN power and radio frequency (RF) integrated circuits (ICs) on GaN-on-poly-AlN (QSTTM) substrates. GaN power and RF ICs integration was feasible due to the reduced parasitics, thermally matched substrate of poly-AlN, high thermal conductivity, high mechanical strength, as well as the optimized GaN layer structure designs. The E/D-mode GaN low-voltage logic device and E-mode power device were realized to implement the soft-switching buck-converter. A 0.25-μm gate length T-shaped gate GaN RF high-electron-mobility transistor was adopted for the high-output power stage. Monolithically integrated GaN power and RF ICs on QST substrates results in a feasible single envelope-tracking power-amplifier chip with high thermal stability.

AB - This is the first comprehensive study on monolithically integrated GaN power and radio frequency (RF) integrated circuits (ICs) on GaN-on-poly-AlN (QSTTM) substrates. GaN power and RF ICs integration was feasible due to the reduced parasitics, thermally matched substrate of poly-AlN, high thermal conductivity, high mechanical strength, as well as the optimized GaN layer structure designs. The E/D-mode GaN low-voltage logic device and E-mode power device were realized to implement the soft-switching buck-converter. A 0.25-μm gate length T-shaped gate GaN RF high-electron-mobility transistor was adopted for the high-output power stage. Monolithically integrated GaN power and RF ICs on QST substrates results in a feasible single envelope-tracking power-amplifier chip with high thermal stability.

KW - Back barrier (B/B) layer

KW - High thermal conductivity

KW - QST substrate

UR - https://www.scopus.com/pages/publications/85124502427

M3 - 会议稿件

AN - SCOPUS:85124502427

T3 - CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

SP - 71

EP - 74

BT - CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

PB - CS Mantech

T2 - 35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021

Y2 - 24 May 2021 through 27 May 2021

ER -

Huang CR, Chiu HC, Liu CH, Wang HC, Kao HL, Chen MC et al. Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications. In CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech. 2021. p. 71-74. (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications

Abstract

Publication series

Conference

Bibliographical note

UN SDGs

Keywords

Other files and links

Fingerprint

Cite this