MoO                         3                          trapping layers with CF                         4                          plasma treatment in flash memory applications

Chuyan Haur Kao; Hsiang Chen; Su Zhien Chen; Chian Yu Chen; Kuang Yu Lo; Chun Han Lin

doi:10.1016/j.apsusc.2014.09.051

MoO ₃ trapping layers with CF ₄ plasma treatment in flash memory applications

Chuyan Haur Kao, Hsiang Chen^*, Su Zhien Chen, Chian Yu Chen, Kuang Yu Lo, Chun Han Lin

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

2 Scopus citations

Abstract

In this research, we used MoO ₃ with CF ₄ plasma treatment as charge trapping layer in metal-oxide-high-k -oxide-Si-type memory. We analyzed material properties and electrical characteristics with multiple analyses. The plasma treatment could increase the trapping density, reduce the leakage current, expand band gap, and passivate the defect to enhance the memory performance. The MoO ₃ charge trapping layer memory with suitable CF ₄ plasma treatment is promising for future nonvolatile memory applications.

Original language	English
Pages (from-to)	379-382
Number of pages	4
Journal	Applied Surface Science
Volume	320
DOIs	https://doi.org/10.1016/j.apsusc.2014.09.051
State	Published - 30 11 2014

Bibliographical note

Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.

Keywords

CF plasma
Crystallization
Fluorine atom
Interface
MoO memory

Access to Document

10.1016/j.apsusc.2014.09.051

Cite this

Kao, C. H., Chen, H., Chen, S. Z., Chen, C. Y., Lo, K. Y., & Lin, C. H. (2014). MoO ₃ trapping layers with CF ₄ plasma treatment in flash memory applications Applied Surface Science, 320, 379-382. https://doi.org/10.1016/j.apsusc.2014.09.051

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title = " MoO 3 trapping layers with CF 4 plasma treatment in flash memory applications ",

abstract = " In this research, we used MoO 3 with CF 4 plasma treatment as charge trapping layer in metal-oxide-high-k -oxide-Si-type memory. We analyzed material properties and electrical characteristics with multiple analyses. The plasma treatment could increase the trapping density, reduce the leakage current, expand band gap, and passivate the defect to enhance the memory performance. The MoO 3 charge trapping layer memory with suitable CF 4 plasma treatment is promising for future nonvolatile memory applications.",

keywords = "CF plasma, Crystallization, Fluorine atom, Interface, MoO memory",

author = "Kao, {Chuyan Haur} and Hsiang Chen and Chen, {Su Zhien} and Chen, {Chian Yu} and Lo, {Kuang Yu} and Lin, {Chun Han}",

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month = nov,

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doi = "10.1016/j.apsusc.2014.09.051",

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Kao, CH, Chen, H, Chen, SZ, Chen, CY, Lo, KY & Lin, CH 2014, ' MoO ₃ trapping layers with CF ₄ plasma treatment in flash memory applications ', Applied Surface Science, vol. 320, pp. 379-382. https://doi.org/10.1016/j.apsusc.2014.09.051

MoO ₃ trapping layers with CF ₄ plasma treatment in flash memory applications . / Kao, Chuyan Haur; Chen, Hsiang; Chen, Su Zhien et al.
In: Applied Surface Science, Vol. 320, 30.11.2014, p. 379-382.

Research output: Contribution to journal › Journal Article › peer-review

TY - JOUR

T1 - MoO 3 trapping layers with CF 4 plasma treatment in flash memory applications

AU - Kao, Chuyan Haur

AU - Chen, Hsiang

AU - Chen, Su Zhien

AU - Chen, Chian Yu

AU - Lo, Kuang Yu

AU - Lin, Chun Han

PY - 2014/11/30

Y1 - 2014/11/30

N2 - In this research, we used MoO 3 with CF 4 plasma treatment as charge trapping layer in metal-oxide-high-k -oxide-Si-type memory. We analyzed material properties and electrical characteristics with multiple analyses. The plasma treatment could increase the trapping density, reduce the leakage current, expand band gap, and passivate the defect to enhance the memory performance. The MoO 3 charge trapping layer memory with suitable CF 4 plasma treatment is promising for future nonvolatile memory applications.

AB - In this research, we used MoO 3 with CF 4 plasma treatment as charge trapping layer in metal-oxide-high-k -oxide-Si-type memory. We analyzed material properties and electrical characteristics with multiple analyses. The plasma treatment could increase the trapping density, reduce the leakage current, expand band gap, and passivate the defect to enhance the memory performance. The MoO 3 charge trapping layer memory with suitable CF 4 plasma treatment is promising for future nonvolatile memory applications.

KW - CF plasma

KW - Crystallization

KW - Fluorine atom

KW - Interface

KW - MoO memory

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