Multilevel ultra-fast and disturb-free flash memory with double embedded Au and Gd2O3 nanocrystals

Jer Chyi Wang; Chih Ting Lin; Po Wei Huang; Li Chun Chang; Chao Sung Lai

doi:10.1109/VLSI-TSA.2013.6545593

Multilevel ultra-fast and disturb-free flash memory with double embedded Au and Gd₂O₃ nanocrystals

Jer Chyi Wang, Chih Ting Lin, Po Wei Huang, Li Chun Chang, Chao Sung Lai

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Ultra-fast (μsec) and disturb-free multilevel flash memory was demonstrated by a novel gold and gadolinium oxide bi-nanocrystals (BNCs). Through nanocrystal band engineering design and using a new operation scheme, the BNCs memory exhibits an ultra-fast program and erase speed for 3.5μsec and 5μsec respectively, which is three orders faster than the conventional one. A disturb-free behavior is achieved for operating under -14 to 9 V. The threshold voltage memory window (2.78 V for 4 bits) closure is only 7.3% under 10⁸ cycling and with only 10% charge loss for 10⁴ sec retention. The activation energy of charge loss and trapped charge centroid were extracted to identify the nanocrystal band engineering and carrier injection mechanism.

Original language	English
Title of host publication	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
DOIs	https://doi.org/10.1109/VLSI-TSA.2013.6545593
State	Published - 2013
Event	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 - Hsinchu, Taiwan Duration: 22 04 2013 → 24 04 2013

Publication series

Name	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

Conference

Conference	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
Country/Territory	Taiwan
City	Hsinchu
Period	22/04/13 → 24/04/13

Access to Document

10.1109/VLSI-TSA.2013.6545593

Cite this

Wang, J. C., Lin, C. T., Huang, P. W., Chang, L. C., & Lai, C. S. (2013). Multilevel ultra-fast and disturb-free flash memory with double embedded Au and Gd₂O₃ nanocrystals. In 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 Article 6545593 (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013). https://doi.org/10.1109/VLSI-TSA.2013.6545593

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title = "Multilevel ultra-fast and disturb-free flash memory with double embedded Au and Gd2O3 nanocrystals",

abstract = "Ultra-fast (μsec) and disturb-free multilevel flash memory was demonstrated by a novel gold and gadolinium oxide bi-nanocrystals (BNCs). Through nanocrystal band engineering design and using a new operation scheme, the BNCs memory exhibits an ultra-fast program and erase speed for 3.5μsec and 5μsec respectively, which is three orders faster than the conventional one. A disturb-free behavior is achieved for operating under -14 to 9 V. The threshold voltage memory window (2.78 V for 4 bits) closure is only 7.3% under 108 cycling and with only 10% charge loss for 104 sec retention. The activation energy of charge loss and trapped charge centroid were extracted to identify the nanocrystal band engineering and carrier injection mechanism.",

author = "Wang, {Jer Chyi} and Lin, {Chih Ting} and Huang, {Po Wei} and Chang, {Li Chun} and Lai, {Chao Sung}",

year = "2013",

doi = "10.1109/VLSI-TSA.2013.6545593",

language = "英语",

isbn = "9781467330817",

series = "2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013",

booktitle = "2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013",

note = "2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 ; Conference date: 22-04-2013 Through 24-04-2013",

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Wang, JC, Lin, CT, Huang, PW, Chang, LC & Lai, CS 2013, Multilevel ultra-fast and disturb-free flash memory with double embedded Au and Gd₂O₃ nanocrystals. in 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013., 6545593, 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013, 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013, Hsinchu, Taiwan, 22/04/13. https://doi.org/10.1109/VLSI-TSA.2013.6545593

Multilevel ultra-fast and disturb-free flash memory with double embedded Au and Gd₂O₃ nanocrystals. / Wang, Jer Chyi; Lin, Chih Ting; Huang, Po Wei et al.
2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013. 2013. 6545593 (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - Ultra-fast (μsec) and disturb-free multilevel flash memory was demonstrated by a novel gold and gadolinium oxide bi-nanocrystals (BNCs). Through nanocrystal band engineering design and using a new operation scheme, the BNCs memory exhibits an ultra-fast program and erase speed for 3.5μsec and 5μsec respectively, which is three orders faster than the conventional one. A disturb-free behavior is achieved for operating under -14 to 9 V. The threshold voltage memory window (2.78 V for 4 bits) closure is only 7.3% under 108 cycling and with only 10% charge loss for 104 sec retention. The activation energy of charge loss and trapped charge centroid were extracted to identify the nanocrystal band engineering and carrier injection mechanism.

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Wang JC, Lin CT, Huang PW, Chang LC, Lai CS. Multilevel ultra-fast and disturb-free flash memory with double embedded Au and Gd₂O₃ nanocrystals. In 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013. 2013. 6545593. (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013). doi: 10.1109/VLSI-TSA.2013.6545593