Nano-IGZO layer for EGFET in pH sensing characteristics

Chia Ming Yang; Jer Chyi Wang; Tzu Wen Chiang; Yi Ting Lin; Teng Wei Juan; Tsung Cheng Chen; Ming Yang Shih; Cheng En Lue; Chao Sung Lai

doi:10.1109/INEC.2013.6466083

Nano-IGZO layer for EGFET in pH sensing characteristics

Chia Ming Yang^*, Jer Chyi Wang, Tzu Wen Chiang, Yi Ting Lin, Teng Wei Juan, Tsung Cheng Chen, Ming Yang Shih, Cheng En Lue, Chao Sung Lai

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

In-Ga-Zn-O (IGZO) was widely applied in the substrate of TFT to replace a-Si in recent year. In this study, IGZO layer with thickness of 70 nm is first proposed as a pH sensing membrane directly on P-type Si substrate acting as an extended gate of conventional extended-gate field-effect Transistor (EGFET). Material criteria of extended gate electrode are low resistance and high capacitance. Therefore, Ar/O₂ ratio was modified in the rf sputtering with IGZO target. Post deposition anneal was also performed to check the sheet resistance and pH sensing performance. EGFETs were measured in standard pH buffer solution by using B1500A and constant voltage constant current (CVCC) circuit. Similar I_DS-V_GS curves including transconductance (G_m) and substrate swing (S.S.) are obtained in various sputtering conditions of IGZO compared to commercial NMOSFET in CD4007. pH application range is only between pH 2 to pH 10. IGZO-EGFET prepared by Ar/O₂ ambience of 24/1 in sputtering can have a sensitivity of 59.5 mV/pH. Lower sensitivity and linearity can be observed in the samples with RTA treament at higher temp and in O₂ ambience. N₂ anneal at 500°C can be used to improve pH sensing performance for IGZO-EGFET prepared by Ar/O ₂ ambience of 20/5 in sputtering. Nano-IGZO layer is verified to be the sensing membrane in EGFET to have a high sensitivity of 59.5 mV/pH for the first time. More studies on enlargement pH application range and minimization of non-ideal effect still need to be investigated.

Original language	English
Title of host publication	Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Pages	480-482
Number of pages	3
DOIs	https://doi.org/10.1109/INEC.2013.6466083
State	Published - 2013
Event	2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 - Singapore, Singapore Duration: 02 01 2013 → 04 01 2013

Publication series

Name	Proceedings - Winter Simulation Conference
ISSN (Print)	0891-7736

Conference

Conference	2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Country/Territory	Singapore
City	Singapore
Period	02/01/13 → 04/01/13

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10.1109/INEC.2013.6466083

Cite this

Yang, C. M., Wang, J. C., Chiang, T. W., Lin, Y. T., Juan, T. W., Chen, T. C., Shih, M. Y., Lue, C. E., & Lai, C. S. (2013). Nano-IGZO layer for EGFET in pH sensing characteristics. In Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 (pp. 480-482). Article 6466083 (Proceedings - Winter Simulation Conference). https://doi.org/10.1109/INEC.2013.6466083

@inproceedings{a33e5b821fb14893884681f756dcc417,

title = "Nano-IGZO layer for EGFET in pH sensing characteristics",

abstract = "In-Ga-Zn-O (IGZO) was widely applied in the substrate of TFT to replace a-Si in recent year. In this study, IGZO layer with thickness of 70 nm is first proposed as a pH sensing membrane directly on P-type Si substrate acting as an extended gate of conventional extended-gate field-effect Transistor (EGFET). Material criteria of extended gate electrode are low resistance and high capacitance. Therefore, Ar/O2 ratio was modified in the rf sputtering with IGZO target. Post deposition anneal was also performed to check the sheet resistance and pH sensing performance. EGFETs were measured in standard pH buffer solution by using B1500A and constant voltage constant current (CVCC) circuit. Similar IDS-VGS curves including transconductance (Gm) and substrate swing (S.S.) are obtained in various sputtering conditions of IGZO compared to commercial NMOSFET in CD4007. pH application range is only between pH 2 to pH 10. IGZO-EGFET prepared by Ar/O2 ambience of 24/1 in sputtering can have a sensitivity of 59.5 mV/pH. Lower sensitivity and linearity can be observed in the samples with RTA treament at higher temp and in O2 ambience. N2 anneal at 500°C can be used to improve pH sensing performance for IGZO-EGFET prepared by Ar/O 2 ambience of 20/5 in sputtering. Nano-IGZO layer is verified to be the sensing membrane in EGFET to have a high sensitivity of 59.5 mV/pH for the first time. More studies on enlargement pH application range and minimization of non-ideal effect still need to be investigated.",

author = "Yang, {Chia Ming} and Wang, {Jer Chyi} and Chiang, {Tzu Wen} and Lin, {Yi Ting} and Juan, {Teng Wei} and Chen, {Tsung Cheng} and Shih, {Ming Yang} and Lue, {Cheng En} and Lai, {Chao Sung}",

year = "2013",

doi = "10.1109/INEC.2013.6466083",

language = "英语",

isbn = "9781467348416",

series = "Proceedings - Winter Simulation Conference",

pages = "480--482",

booktitle = "Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013",

note = "2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 ; Conference date: 02-01-2013 Through 04-01-2013",

}

Yang, CM , Wang, JC, Chiang, TW, Lin, YT, Juan, TW, Chen, TC, Shih, MY, Lue, CE & Lai, CS 2013, Nano-IGZO layer for EGFET in pH sensing characteristics. in Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013., 6466083, Proceedings - Winter Simulation Conference, pp. 480-482, 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013, Singapore, Singapore, 02/01/13. https://doi.org/10.1109/INEC.2013.6466083

Nano-IGZO layer for EGFET in pH sensing characteristics. / Yang, Chia Ming ; Wang, Jer Chyi; Chiang, Tzu Wen et al.
Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013. 2013. p. 480-482 6466083 (Proceedings - Winter Simulation Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Nano-IGZO layer for EGFET in pH sensing characteristics

AU - Yang, Chia Ming

AU - Wang, Jer Chyi

AU - Chiang, Tzu Wen

AU - Lin, Yi Ting

AU - Juan, Teng Wei

AU - Chen, Tsung Cheng

AU - Shih, Ming Yang

AU - Lue, Cheng En

AU - Lai, Chao Sung

PY - 2013

Y1 - 2013

N2 - In-Ga-Zn-O (IGZO) was widely applied in the substrate of TFT to replace a-Si in recent year. In this study, IGZO layer with thickness of 70 nm is first proposed as a pH sensing membrane directly on P-type Si substrate acting as an extended gate of conventional extended-gate field-effect Transistor (EGFET). Material criteria of extended gate electrode are low resistance and high capacitance. Therefore, Ar/O2 ratio was modified in the rf sputtering with IGZO target. Post deposition anneal was also performed to check the sheet resistance and pH sensing performance. EGFETs were measured in standard pH buffer solution by using B1500A and constant voltage constant current (CVCC) circuit. Similar IDS-VGS curves including transconductance (Gm) and substrate swing (S.S.) are obtained in various sputtering conditions of IGZO compared to commercial NMOSFET in CD4007. pH application range is only between pH 2 to pH 10. IGZO-EGFET prepared by Ar/O2 ambience of 24/1 in sputtering can have a sensitivity of 59.5 mV/pH. Lower sensitivity and linearity can be observed in the samples with RTA treament at higher temp and in O2 ambience. N2 anneal at 500°C can be used to improve pH sensing performance for IGZO-EGFET prepared by Ar/O 2 ambience of 20/5 in sputtering. Nano-IGZO layer is verified to be the sensing membrane in EGFET to have a high sensitivity of 59.5 mV/pH for the first time. More studies on enlargement pH application range and minimization of non-ideal effect still need to be investigated.

AB - In-Ga-Zn-O (IGZO) was widely applied in the substrate of TFT to replace a-Si in recent year. In this study, IGZO layer with thickness of 70 nm is first proposed as a pH sensing membrane directly on P-type Si substrate acting as an extended gate of conventional extended-gate field-effect Transistor (EGFET). Material criteria of extended gate electrode are low resistance and high capacitance. Therefore, Ar/O2 ratio was modified in the rf sputtering with IGZO target. Post deposition anneal was also performed to check the sheet resistance and pH sensing performance. EGFETs were measured in standard pH buffer solution by using B1500A and constant voltage constant current (CVCC) circuit. Similar IDS-VGS curves including transconductance (Gm) and substrate swing (S.S.) are obtained in various sputtering conditions of IGZO compared to commercial NMOSFET in CD4007. pH application range is only between pH 2 to pH 10. IGZO-EGFET prepared by Ar/O2 ambience of 24/1 in sputtering can have a sensitivity of 59.5 mV/pH. Lower sensitivity and linearity can be observed in the samples with RTA treament at higher temp and in O2 ambience. N2 anneal at 500°C can be used to improve pH sensing performance for IGZO-EGFET prepared by Ar/O 2 ambience of 20/5 in sputtering. Nano-IGZO layer is verified to be the sensing membrane in EGFET to have a high sensitivity of 59.5 mV/pH for the first time. More studies on enlargement pH application range and minimization of non-ideal effect still need to be investigated.

UR - http://www.scopus.com/inward/record.url?scp=84874779303&partnerID=8YFLogxK

U2 - 10.1109/INEC.2013.6466083

DO - 10.1109/INEC.2013.6466083

M3 - 会议稿件

AN - SCOPUS:84874779303

SN - 9781467348416

T3 - Proceedings - Winter Simulation Conference

SP - 480

EP - 482

BT - Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013

T2 - 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013

Y2 - 2 January 2013 through 4 January 2013

ER -

Nano-IGZO layer for EGFET in pH sensing characteristics

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