Nanoelectronics based on fluorinated graphene

Fluorinated graphene or the so-called fluorographene, represents the formation of atomic layered structure where the fluorine atoms are attached on the in-plane graphene surface, leading to distinct material properties from those of the intrinsic graphene such as tunable electrical conductivity (E_g from 0.8 to 2.9eV), optical band gap (wide band gap semiconductor with E_g>3.0eV), and surface chemistry. It is well known that the intrinsic graphene lacks band gap which hinders its application in logic electronics. As for fluorographene, the tunable electronic structure can be achieved, from semiconductor to insulator, by adjusting the stoichiometry of C/F atomic ratio, making it beneficial for the integration of versatile nanoelectronics, where the metal, semiconductor, and insulator could be realized in the same atomic layers. In this chapter, we discuss the physical and chemical properties of fluorinated graphene, especially its electrical characteristics and the recent fluorination processes with plasma-assisted low-damaged functionalization, as well as the recent progress and outlooks on fluorographene-based nanoelectronics.