Nanoscale (EOT= 5.6 nm) nonvolatile memory capacitors using atomic layer deposited high-k HfAlO nanocrystals

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2008
Event	International Conference on Solid State Devices and Materials (SSDM) - Tsukuba, Japan Duration: 24 09 2008 → 26 09 2008

Conference	International Conference on Solid State Devices and Materials (SSDM)
Period	24/09/08 → 26/09/08

Cite this

@conference{0d6f838c722c4c31b45def48ce34ca70,

title = "Nanoscale (EOT= 5.6 nm) nonvolatile memory capacitors using atomic layer deposited high-k HfAlO nanocrystals",

author = "Z. Rahaman and A. Das and Siddheswar Maikap",

year = "2008",

language = "American English",

note = "International Conference on Solid State Devices and Materials (SSDM) ; Conference date: 24-09-2008 Through 26-09-2008",

}