Nanoscale flash and resistive switching memories using IrOx metal nanocrystals

W. Banerjee; S. Maikap

doi:10.1109/ICSICT.2010.5667566

Nanoscale flash and resistive switching memories using IrO_x metal nanocrystals

W. Banerjee^*, S. Maikap

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The nanoscale (EOT<6 nm) flash and resistive switching memories using IrO_x nanocrystals have been investigated. The IrO_x nanocrystals embedded in high-κ Al₂O₃ film are observed by both high-resolution transmission electron microscopy and x-ray photoelectron spectroscopy. The average size and density of IrO_x nanocrystals are found to be ∼3 nm and ∼7×10¹²/cm ², respectively. The flash memory devices with excellent endurance of 10⁴ cycles and moderate retention of 10 hours are obtained. A bipolar resistive switching memory with a resistance ratio of ∼1.4×10² is observed after 1 hour of retention time.

Original language	English
Title of host publication	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages	1115-1117
Number of pages	3
DOIs	https://doi.org/10.1109/ICSICT.2010.5667566
State	Published - 2010
Event	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: 01 11 2010 → 04 11 2010

Publication series

Name	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
Country/Territory	China
City	Shanghai
Period	01/11/10 → 04/11/10

Access to Document

10.1109/ICSICT.2010.5667566

Cite this

Banerjee, W., & Maikap, S. (2010). Nanoscale flash and resistive switching memories using IrO_x metal nanocrystals. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 1115-1117). Article 5667566 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667566

@inproceedings{226d243f45aa428ba994a633eb670dcc,

title = "Nanoscale flash and resistive switching memories using IrOx metal nanocrystals",

abstract = "The nanoscale (EOT<6 nm) flash and resistive switching memories using IrOx nanocrystals have been investigated. The IrOx nanocrystals embedded in high-κ Al2O3 film are observed by both high-resolution transmission electron microscopy and x-ray photoelectron spectroscopy. The average size and density of IrOx nanocrystals are found to be ∼3 nm and ∼7×1012/cm 2, respectively. The flash memory devices with excellent endurance of 104 cycles and moderate retention of 10 hours are obtained. A bipolar resistive switching memory with a resistance ratio of ∼1.4×102 is observed after 1 hour of retention time.",

author = "W. Banerjee and S. Maikap",

year = "2010",

doi = "10.1109/ICSICT.2010.5667566",

language = "英语",

isbn = "9781424457984",

series = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

pages = "1115--1117",

booktitle = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 01-11-2010 Through 04-11-2010",

}

Banerjee, W & Maikap, S 2010, Nanoscale flash and resistive switching memories using IrO_x metal nanocrystals. in ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 5667566, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, pp. 1115-1117, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 01/11/10. https://doi.org/10.1109/ICSICT.2010.5667566

Nanoscale flash and resistive switching memories using IrO_x metal nanocrystals. / Banerjee, W.; Maikap, S.
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 1115-1117 5667566 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - The nanoscale (EOT<6 nm) flash and resistive switching memories using IrOx nanocrystals have been investigated. The IrOx nanocrystals embedded in high-κ Al2O3 film are observed by both high-resolution transmission electron microscopy and x-ray photoelectron spectroscopy. The average size and density of IrOx nanocrystals are found to be ∼3 nm and ∼7×1012/cm 2, respectively. The flash memory devices with excellent endurance of 104 cycles and moderate retention of 10 hours are obtained. A bipolar resistive switching memory with a resistance ratio of ∼1.4×102 is observed after 1 hour of retention time.

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Banerjee W, Maikap S. Nanoscale flash and resistive switching memories using IrO_x metal nanocrystals. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 1115-1117. 5667566. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2010.5667566