| Translated title of the contribution | 以Gd2O3/Al2O3為切換材料之奈米級電阻式記憶體 |
|---|---|
| Original language | American English |
| Supervisors/Advisors |
|
| State | Published - 2015 |
| Externally published | Yes |
Nanoscale resistive switching memory using Gd2O3/Al2O3 materials
迦納
Research output: Types of Thesis › Doctoral thesis