Narrow-Band AlGaN-Based UVB Light-Emitting Diodes

Tsung Yen Liu; Shih Ming Huang; Mu Jen Lai; Rui Sen Liu; Xiong Zhang; Yi Tsung Chang; Lin Jun Zhang; Ray Ming Lin

doi:10.1021/acsaelm.1c00593

Narrow-Band AlGaN-Based UVB Light-Emitting Diodes

Tsung Yen Liu, Shih Ming Huang, Mu Jen Lai, Rui Sen Liu, Xiong Zhang, Yi Tsung Chang, Lin Jun Zhang, Ray Ming Lin^*

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

12 Scopus citations

Abstract

This paper reports an AlGaN-based narrow-band ultraviolet-B (NB-UVB) light-emitting diode (LED) exhibiting a single electroluminescence peak with a full-width at half-maximum (FWHM) of less than 10 nm at forward currents (If) from 10 to 200 mA, broadening to 11.6 nm when the forward current reached 350 mA. We attribute the narrow FWHM to effectively decreasing the degrees of piezoelectric polarization in the MQWs, and the excess electron overflow from the MQW to the p-layer was avoided. The maximum external quantum efficiency (EQE) of 2.16% and wall plug efficiency of 1.74% occurred when the forward current was 10 mA; the EQE dropped by 8.6% when the forward current increased from 10 to 60 mA. Furthermore, the light output power decreased to 85.4 and 82.5% of its initial value after 620 and 3500 h, respectively, under conditions of 60 mA dc aging. The characteristics of this NB-UVB LED suggest great potential for its application in phototherapy.

Original language	English
Pages (from-to)	4121-4125
Number of pages	5
Journal	ACS Applied Electronic Materials
Volume	3
Issue number	9
DOIs	https://doi.org/10.1021/acsaelm.1c00593
State	Published - 28 09 2021

Bibliographical note

Publisher Copyright:
© 2021 American Chemical Society.

Keywords

AlGaN
external quantum efficiency
light-emitting diodes
narrow-band ultraviolet-B
wall-plug efficiency

Access to Document

10.1021/acsaelm.1c00593

Cite this

@article{5e43059d33574c4badcc595e57c540b4,

title = "Narrow-Band AlGaN-Based UVB Light-Emitting Diodes",

abstract = "This paper reports an AlGaN-based narrow-band ultraviolet-B (NB-UVB) light-emitting diode (LED) exhibiting a single electroluminescence peak with a full-width at half-maximum (FWHM) of less than 10 nm at forward currents (If) from 10 to 200 mA, broadening to 11.6 nm when the forward current reached 350 mA. We attribute the narrow FWHM to effectively decreasing the degrees of piezoelectric polarization in the MQWs, and the excess electron overflow from the MQW to the p-layer was avoided. The maximum external quantum efficiency (EQE) of 2.16% and wall plug efficiency of 1.74% occurred when the forward current was 10 mA; the EQE dropped by 8.6% when the forward current increased from 10 to 60 mA. Furthermore, the light output power decreased to 85.4 and 82.5% of its initial value after 620 and 3500 h, respectively, under conditions of 60 mA dc aging. The characteristics of this NB-UVB LED suggest great potential for its application in phototherapy.",

keywords = "AlGaN, external quantum efficiency, light-emitting diodes, narrow-band ultraviolet-B, wall-plug efficiency",

author = "Liu, {Tsung Yen} and Huang, {Shih Ming} and Lai, {Mu Jen} and Liu, {Rui Sen} and Xiong Zhang and Chang, {Yi Tsung} and Zhang, {Lin Jun} and Lin, {Ray Ming}",

note = "Publisher Copyright: {\textcopyright} 2021 American Chemical Society.",

year = "2021",

month = sep,

day = "28",

doi = "10.1021/acsaelm.1c00593",

language = "英语",

volume = "3",

pages = "4121--4125",

journal = "ACS Applied Electronic Materials",

issn = "2637-6113",

publisher = "American Chemical Society",

number = "9",

}

TY - JOUR

T1 - Narrow-Band AlGaN-Based UVB Light-Emitting Diodes

AU - Liu, Tsung Yen

AU - Huang, Shih Ming

AU - Lai, Mu Jen

AU - Liu, Rui Sen

AU - Zhang, Xiong

AU - Chang, Yi Tsung

AU - Zhang, Lin Jun

AU - Lin, Ray Ming

PY - 2021/9/28

Y1 - 2021/9/28

N2 - This paper reports an AlGaN-based narrow-band ultraviolet-B (NB-UVB) light-emitting diode (LED) exhibiting a single electroluminescence peak with a full-width at half-maximum (FWHM) of less than 10 nm at forward currents (If) from 10 to 200 mA, broadening to 11.6 nm when the forward current reached 350 mA. We attribute the narrow FWHM to effectively decreasing the degrees of piezoelectric polarization in the MQWs, and the excess electron overflow from the MQW to the p-layer was avoided. The maximum external quantum efficiency (EQE) of 2.16% and wall plug efficiency of 1.74% occurred when the forward current was 10 mA; the EQE dropped by 8.6% when the forward current increased from 10 to 60 mA. Furthermore, the light output power decreased to 85.4 and 82.5% of its initial value after 620 and 3500 h, respectively, under conditions of 60 mA dc aging. The characteristics of this NB-UVB LED suggest great potential for its application in phototherapy.

AB - This paper reports an AlGaN-based narrow-band ultraviolet-B (NB-UVB) light-emitting diode (LED) exhibiting a single electroluminescence peak with a full-width at half-maximum (FWHM) of less than 10 nm at forward currents (If) from 10 to 200 mA, broadening to 11.6 nm when the forward current reached 350 mA. We attribute the narrow FWHM to effectively decreasing the degrees of piezoelectric polarization in the MQWs, and the excess electron overflow from the MQW to the p-layer was avoided. The maximum external quantum efficiency (EQE) of 2.16% and wall plug efficiency of 1.74% occurred when the forward current was 10 mA; the EQE dropped by 8.6% when the forward current increased from 10 to 60 mA. Furthermore, the light output power decreased to 85.4 and 82.5% of its initial value after 620 and 3500 h, respectively, under conditions of 60 mA dc aging. The characteristics of this NB-UVB LED suggest great potential for its application in phototherapy.

KW - AlGaN

KW - external quantum efficiency

KW - light-emitting diodes

KW - narrow-band ultraviolet-B

KW - wall-plug efficiency

UR - http://www.scopus.com/inward/record.url?scp=85115246608&partnerID=8YFLogxK

U2 - 10.1021/acsaelm.1c00593

DO - 10.1021/acsaelm.1c00593

M3 - 文章

AN - SCOPUS:85115246608

SN - 2637-6113

VL - 3

SP - 4121

EP - 4125

JO - ACS Applied Electronic Materials

JF - ACS Applied Electronic Materials

IS - 9

ER -

Narrow-Band AlGaN-Based UVB Light-Emitting Diodes

Abstract

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Cite this