Narrow-Band AlGaN-Based UVB Light-Emitting Diodes

Tsung Yen Liu, Shih Ming Huang, Mu Jen Lai, Rui Sen Liu, Xiong Zhang, Yi Tsung Chang, Lin Jun Zhang, Ray Ming Lin*

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

8 Scopus citations

Abstract

This paper reports an AlGaN-based narrow-band ultraviolet-B (NB-UVB) light-emitting diode (LED) exhibiting a single electroluminescence peak with a full-width at half-maximum (FWHM) of less than 10 nm at forward currents (If) from 10 to 200 mA, broadening to 11.6 nm when the forward current reached 350 mA. We attribute the narrow FWHM to effectively decreasing the degrees of piezoelectric polarization in the MQWs, and the excess electron overflow from the MQW to the p-layer was avoided. The maximum external quantum efficiency (EQE) of 2.16% and wall plug efficiency of 1.74% occurred when the forward current was 10 mA; the EQE dropped by 8.6% when the forward current increased from 10 to 60 mA. Furthermore, the light output power decreased to 85.4 and 82.5% of its initial value after 620 and 3500 h, respectively, under conditions of 60 mA dc aging. The characteristics of this NB-UVB LED suggest great potential for its application in phototherapy.

Original languageEnglish
Pages (from-to)4121-4125
Number of pages5
JournalACS Applied Electronic Materials
Volume3
Issue number9
DOIs
StatePublished - 28 09 2021

Bibliographical note

Publisher Copyright:
© 2021 American Chemical Society.

Keywords

  • AlGaN
  • external quantum efficiency
  • light-emitting diodes
  • narrow-band ultraviolet-B
  • wall-plug efficiency

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