New insights into the charge loss components in a SONOS flash memory cell before and after long term cycling

Y. T. Lin; P. Y. Chiang; C. S. Lai; S. S. Chung; George Chou; C. T. Huang; Paul Chen; C. H. Chu; C. C.H. Hsu

New insights into the charge loss components in a SONOS flash memory cell before and after long term cycling

Y. T. Lin, P. Y. Chiang, C. S. Lai, S. S. Chung, George Chou, C. T. Huang, Paul Chen, C. H. Chu, C. C.H. Hsu

Department of Electronic Engineering

Research output: Contribution to conference › Conference Paper › peer-review

2 Scopus citations

Abstract

In this paper, the ONO layer scaling effect and the leakage components in a SONOS cell have been extensively studied. The reliability with focus on both endurance and data retention has been demonstrated. Result show that thinner blocking oxide has better endurance, while it has poorer data retention. For the data retention before cycling, thermionic and direct tunneling, in relating to the data loss, are the two dominant leakage components, which can be separated. Moreover, after cycling, we have been able to separate another third component-the trap-to-trap tunneling current. These results are useful toward an understanding of the leakage mechanisms of SONOS cell as well as the scaling effect of ONO layers.

Original language	English
Pages	239-242
Number of pages	4
State	Published - 2004
Event	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan Duration: 05 07 2004 → 08 07 2004

Conference

Conference	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
Country/Territory	Taiwan
Period	05/07/04 → 08/07/04

Cite this

Lin, Y. T., Chiang, P. Y., Lai, C. S., Chung, S. S., Chou, G., Huang, C. T., Chen, P., Chu, C. H., & Hsu, C. C. H. (2004). New insights into the charge loss components in a SONOS flash memory cell before and after long term cycling. 239-242. Paper presented at Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004, Taiwan.

@conference{8e93f99770ec4d229f13919c6f873b87,

title = "New insights into the charge loss components in a SONOS flash memory cell before and after long term cycling",

abstract = "In this paper, the ONO layer scaling effect and the leakage components in a SONOS cell have been extensively studied. The reliability with focus on both endurance and data retention has been demonstrated. Result show that thinner blocking oxide has better endurance, while it has poorer data retention. For the data retention before cycling, thermionic and direct tunneling, in relating to the data loss, are the two dominant leakage components, which can be separated. Moreover, after cycling, we have been able to separate another third component-the trap-to-trap tunneling current. These results are useful toward an understanding of the leakage mechanisms of SONOS cell as well as the scaling effect of ONO layers.",

author = "Lin, {Y. T.} and Chiang, {P. Y.} and Lai, {C. S.} and Chung, {S. S.} and George Chou and Huang, {C. T.} and Paul Chen and Chu, {C. H.} and Hsu, {C. C.H.}",

year = "2004",

language = "英语",

pages = "239--242",

note = "Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 ; Conference date: 05-07-2004 Through 08-07-2004",

}

Lin, YT, Chiang, PY, Lai, CS, Chung, SS, Chou, G, Huang, CT, Chen, P, Chu, CH & Hsu, CCH 2004, 'New insights into the charge loss components in a SONOS flash memory cell before and after long term cycling', Paper presented at Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004, Taiwan, 05/07/04 - 08/07/04 pp. 239-242.

New insights into the charge loss components in a SONOS flash memory cell before and after long term cycling. / Lin, Y. T.; Chiang, P. Y.; Lai, C. S. et al.
2004. 239-242 Paper presented at Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004, Taiwan.

Research output: Contribution to conference › Conference Paper › peer-review

TY - CONF

T1 - New insights into the charge loss components in a SONOS flash memory cell before and after long term cycling

AU - Lin, Y. T.

AU - Chiang, P. Y.

AU - Lai, C. S.

AU - Chung, S. S.

AU - Chou, George

AU - Huang, C. T.

AU - Chen, Paul

AU - Chu, C. H.

AU - Hsu, C. C.H.

PY - 2004

Y1 - 2004

N2 - In this paper, the ONO layer scaling effect and the leakage components in a SONOS cell have been extensively studied. The reliability with focus on both endurance and data retention has been demonstrated. Result show that thinner blocking oxide has better endurance, while it has poorer data retention. For the data retention before cycling, thermionic and direct tunneling, in relating to the data loss, are the two dominant leakage components, which can be separated. Moreover, after cycling, we have been able to separate another third component-the trap-to-trap tunneling current. These results are useful toward an understanding of the leakage mechanisms of SONOS cell as well as the scaling effect of ONO layers.

AB - In this paper, the ONO layer scaling effect and the leakage components in a SONOS cell have been extensively studied. The reliability with focus on both endurance and data retention has been demonstrated. Result show that thinner blocking oxide has better endurance, while it has poorer data retention. For the data retention before cycling, thermionic and direct tunneling, in relating to the data loss, are the two dominant leakage components, which can be separated. Moreover, after cycling, we have been able to separate another third component-the trap-to-trap tunneling current. These results are useful toward an understanding of the leakage mechanisms of SONOS cell as well as the scaling effect of ONO layers.

UR - http://www.scopus.com/inward/record.url?scp=14844321585&partnerID=8YFLogxK

M3 - 论文

AN - SCOPUS:14844321585

SP - 239

EP - 242

T2 - Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004

Y2 - 5 July 2004 through 8 July 2004

ER -

New insights into the charge loss components in a SONOS flash memory cell before and after long term cycling

Abstract

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