New Observation on PBTI Characteristics of Contact Etching Stop Layer (CESL) Induced Tensile Strained HfO2 nMOSFET

Woei-Cherng Wu, Tien-Sheng Chao, Te-Hsin Chiu, Chao-Sung Lai, Jer-Chyi Wang, Ming-Wen Ma, Wen-Cheng Lo

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2008
Event	International Conference on Solid State Devices and Materials (SSDM) - Tsukuba, Japan Duration: 24 09 2008 → 26 09 2008

Conference	International Conference on Solid State Devices and Materials (SSDM)
Period	24/09/08 → 26/09/08

Cite this

@conference{893f967f090541b9830d6ab84d7ba0b4,

title = "New Observation on PBTI Characteristics of Contact Etching Stop Layer (CESL) Induced Tensile Strained HfO2 nMOSFET",

author = "Woei-Cherng Wu and Tien-Sheng Chao and Te-Hsin Chiu and Chao-Sung Lai and Jer-Chyi Wang and Ming-Wen Ma and Wen-Cheng Lo",

year = "2008",

language = "American English",

note = "International Conference on Solid State Devices and Materials (SSDM) ; Conference date: 24-09-2008 Through 26-09-2008",

}

TY - CONF

T1 - New Observation on PBTI Characteristics of Contact Etching Stop Layer (CESL) Induced Tensile Strained HfO2 nMOSFET

AU - Wu, Woei-Cherng

AU - Chao, Tien-Sheng

AU - Chiu, Te-Hsin

AU - Lai, Chao-Sung

AU - Wang, Jer-Chyi

AU - Ma, Ming-Wen

AU - Lo, Wen-Cheng

PY - 2008

Y1 - 2008

M3 - Proceeding

T2 - International Conference on Solid State Devices and Materials (SSDM)

Y2 - 24 September 2008 through 26 September 2008

ER -