New pH-sensitive TaOxNy membranes prepared by NH3 plasma surface treatment and nitrogen incorporated reactive sputtering

Chao Sung Lai*, Cheng En Lue, Chia Ming Yang, Jui Hsiu Jao, Chih Chiang Tai

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

16 Scopus citations

Abstract

For low cost, easy fabrication and low process temperature, Ta2O5 and TaOxNy pH-sensing membranes were prepared by reactive RF sputtering. To incorporate nitrogen into Ta2O5 layer, two process techniques including NH3 plasma treatment on Ta2O5 surface and TaOxNy layer directly deposited in reactive RF sputtering with various N2 ratios were proposed. With NH3 plasma treatment for 10 min, the sensitivity of Ta2O5-EIS structure can be increased to 54.9 mV/pH. The similar result can be obtained TaOxNy layer directly deposited in the nitrogen incorporated reactive RF sputtering. For the long-term stability, both two process techniques could be applied to minimize the drift coefficient. With proper nitrogen incorporation process, an excellent sensitive membrane can be obtained by low temperature process based on NH3 plasma treatment.

Original languageEnglish
Pages (from-to)77-81
Number of pages5
JournalSensors and Actuators, B: Chemical
Volume130
Issue number1
DOIs
StatePublished - 14 03 2008

Keywords

  • Drift
  • Nitrogen incorporation
  • RF sputtering
  • TaO
  • TaON

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