New pixel-shared design and split-path readout of CMOS image sensor circuits

Hwang Cherng Chow*, Yung Kuo Ho

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

This paper reports a CMOS active pixel sensor (APS) of 128 × 128 resolution designed for high quantum efficiency. This kind of image sensor can be operated under 3.3V, and use a new structure of shared-pixel and split-path readout direction. This method has the advantage that the number of transistors in each pixel is reduced to increase the fill factor by enlarging the photo-sensing area; on the other hand, it also raises the speed of readout, and is twice as fast as traditional single direction readout. Besides, we use a delta-difference sampling (DDS) for readout circuit to suppress the Fixed Pattern Noise (FPN). The complete CMOS image sensor is implemented based on TSMC 0.35μm 1P4M CMOS technology.

Original languageEnglish
Pages (from-to)IV/49-IV/52
JournalProceedings - IEEE International Symposium on Circuits and Systems
Volume4
StatePublished - 2002
Event2002 IEEE International Symposium on Circuits and Systems - Phoenix, AZ, United States
Duration: 26 05 200229 05 2002

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