New pixel-shared design and split-path readout of CMOS image sensor circuits

Hwang Cherng Chow; Yung Kuo Ho

New pixel-shared design and split-path readout of CMOS image sensor circuits

Hwang Cherng Chow^*
, Yung Kuo Ho

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to journal › Conference article › peer-review

Abstract

This paper reports a CMOS active pixel sensor (APS) of 128 × 128 resolution designed for high quantum efficiency. This kind of image sensor can be operated under 3.3V, and use a new structure of shared-pixel and split-path readout direction. This method has the advantage that the number of transistors in each pixel is reduced to increase the fill factor by enlarging the photo-sensing area; on the other hand, it also raises the speed of readout, and is twice as fast as traditional single direction readout. Besides, we use a delta-difference sampling (DDS) for readout circuit to suppress the Fixed Pattern Noise (FPN). The complete CMOS image sensor is implemented based on TSMC 0.35μm 1P4M CMOS technology.

Original language	English
Pages (from-to)	IV/49-IV/52
Journal	Proceedings - IEEE International Symposium on Circuits and Systems
Volume	4
State	Published - 2002
Event	2002 IEEE International Symposium on Circuits and Systems - Phoenix, AZ, United States Duration: 26 05 2002 → 29 05 2002

Cite this

@article{5683fb9568664c2a8381b48a48f791ce,

title = "New pixel-shared design and split-path readout of CMOS image sensor circuits",

abstract = "This paper reports a CMOS active pixel sensor (APS) of 128 × 128 resolution designed for high quantum efficiency. This kind of image sensor can be operated under 3.3V, and use a new structure of shared-pixel and split-path readout direction. This method has the advantage that the number of transistors in each pixel is reduced to increase the fill factor by enlarging the photo-sensing area; on the other hand, it also raises the speed of readout, and is twice as fast as traditional single direction readout. Besides, we use a delta-difference sampling (DDS) for readout circuit to suppress the Fixed Pattern Noise (FPN). The complete CMOS image sensor is implemented based on TSMC 0.35μm 1P4M CMOS technology.",

author = "Chow, \{Hwang Cherng\} and Ho, \{Yung Kuo\}",

year = "2002",

language = "英语",

volume = "4",

pages = "IV/49--IV/52",

journal = "Proceedings - IEEE International Symposium on Circuits and Systems",

issn = "0271-4310",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE International Symposium on Circuits and Systems ; Conference date: 26-05-2002 Through 29-05-2002",

}

TY - JOUR

T1 - New pixel-shared design and split-path readout of CMOS image sensor circuits

AU - Chow, Hwang Cherng

AU - Ho, Yung Kuo

PY - 2002

Y1 - 2002

N2 - This paper reports a CMOS active pixel sensor (APS) of 128 × 128 resolution designed for high quantum efficiency. This kind of image sensor can be operated under 3.3V, and use a new structure of shared-pixel and split-path readout direction. This method has the advantage that the number of transistors in each pixel is reduced to increase the fill factor by enlarging the photo-sensing area; on the other hand, it also raises the speed of readout, and is twice as fast as traditional single direction readout. Besides, we use a delta-difference sampling (DDS) for readout circuit to suppress the Fixed Pattern Noise (FPN). The complete CMOS image sensor is implemented based on TSMC 0.35μm 1P4M CMOS technology.

AB - This paper reports a CMOS active pixel sensor (APS) of 128 × 128 resolution designed for high quantum efficiency. This kind of image sensor can be operated under 3.3V, and use a new structure of shared-pixel and split-path readout direction. This method has the advantage that the number of transistors in each pixel is reduced to increase the fill factor by enlarging the photo-sensing area; on the other hand, it also raises the speed of readout, and is twice as fast as traditional single direction readout. Besides, we use a delta-difference sampling (DDS) for readout circuit to suppress the Fixed Pattern Noise (FPN). The complete CMOS image sensor is implemented based on TSMC 0.35μm 1P4M CMOS technology.

UR - https://www.scopus.com/pages/publications/0036290706

M3 - 会议文章

AN - SCOPUS:0036290706

SN - 0271-4310

VL - 4

SP - IV/49-IV/52

JO - Proceedings - IEEE International Symposium on Circuits and Systems

JF - Proceedings - IEEE International Symposium on Circuits and Systems

T2 - 2002 IEEE International Symposium on Circuits and Systems

Y2 - 26 May 2002 through 29 May 2002

ER -

New pixel-shared design and split-path readout of CMOS image sensor circuits

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