Nitridation of the Stacked Poly-Si Gate to Suppress the Boron Penetration in pMOS

Yung Hao Lin; Chao Sung Lai; Chung Len Lee; Tan Fu Lei; Tien Sheng Chao

doi:10.1109/55.790724

Nitridation of the Stacked Poly-Si Gate to Suppress the Boron Penetration in pMOS

Yung Hao Lin
, Chao Sung Lai
, Chung Len Lee
, Tan Fu Lei
, Tien Sheng Chao

Research output: Contribution to journal › Journal Article › peer-review

10 Scopus citations

Abstract

Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF 2+ -implantation is proposed and demonstrated. The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.

Original language	English
Pages (from-to)	248-249
Number of pages	2
Journal	IEEE Electron Device Letters
Volume	16
Issue number	6
DOIs	https://doi.org/10.1109/55.790724
State	Published - 06 1995
Externally published	Yes

Access to Document

10.1109/55.790724

Cite this

@article{afdabcf60c3a44369709df0b56ef0699,

title = "Nitridation of the Stacked Poly-Si Gate to Suppress the Boron Penetration in pMOS",

abstract = "Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF 2+ -implantation is proposed and demonstrated. The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.",

author = "Lin, \{Yung Hao\} and Lai, \{Chao Sung\} and Lee, \{Chung Len\} and Lei, \{Tan Fu\} and Chao, \{Tien Sheng\}",

year = "1995",

month = jun,

doi = "10.1109/55.790724",

language = "英语",

volume = "16",

pages = "248--249",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Nitridation of the Stacked Poly-Si Gate to Suppress the Boron Penetration in pMOS

AU - Lin, Yung Hao

AU - Lai, Chao Sung

AU - Lee, Chung Len

AU - Lei, Tan Fu

AU - Chao, Tien Sheng

PY - 1995/6

Y1 - 1995/6

N2 - Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF 2+ -implantation is proposed and demonstrated. The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.

AB - Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF 2+ -implantation is proposed and demonstrated. The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.

UR - https://www.scopus.com/pages/publications/0029324282

U2 - 10.1109/55.790724

DO - 10.1109/55.790724

M3 - 文章

AN - SCOPUS:0029324282

SN - 0741-3106

VL - 16

SP - 248

EP - 249

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

ER -

Nitridation of the Stacked Poly-Si Gate to Suppress the Boron Penetration in pMOS

Abstract

Access to Document

Other files and links

Fingerprint

Cite this