Nitride-based photodiode at 510-nm wavelength for plastic optical fiber communication

J. W. Shi*, H. Y. Huang, J. K. Sheu, S. H. Hsieh, Y. S. Wu, Ja Yu Lu, F. H. Huang, W. C. Lai

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

9 Scopus citations

Abstract

We demonstrate a GaN-based waveguide photodiode at a wavelength of around 510 nm for plastic optical fiber communication. Compared with the performance of an Si-based photodiode in the same wavelength regime, our device can achieve better external efficiency. It also enjoys the unique advantage of monolithic integration with the GaN-based green-amber light-emitting-diode (LED). Our demonstrated photodiode exhibits high external efficiency (73%) and a 600-MHz electrical bandwidth. Under forward bias, this device can also serve as a transmitter (LED), and the measured optical center wavelength is around 515 nm with a 70-MHz electrical bandwidth.

Original languageEnglish
Pages (from-to)283-285
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number1
DOIs
StatePublished - 2006
Externally publishedYes

Keywords

  • High efficiency
  • High-power photodiode
  • Optical fiber
  • Optical receivers
  • Photodiode

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