Nitride light-emitting diodes grown on Si (111) using a TiN template

N. C. Chen; W. C. Lien; C. F. Shih; P. H. Chang; T. W. Wang; M. C. Wu

doi:10.1063/1.2202389

Nitride light-emitting diodes grown on Si (111) using a TiN template

N. C. Chen^*
, W. C. Lien
, C. F. Shih
, P. H. Chang
, T. W. Wang
, M. C. Wu

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Research output: Contribution to journal › Journal Article › peer-review

8 Scopus citations

Abstract

Nitride light-emitting diodes (LEDs) are grown on a Si (111) substrate with a TiN template. Transmission electron microscopy and x-ray diffraction indicate that the epitaxial relation follows Si (1,1,1) ∥TiN (1,1,1) ∥AlN (0,0,1), Si [1,1,0] ∥TiN [1,1,0], and Si [0,0,1] ∥TiN [0,0,1]. The reflectance measurement and simulation results indicate that the TiN can be adopted as a reflector to mitigate the substrate absorption problem, thus increasing the extraction efficiency of nitride LEDs grown on Si.

Original language	English
Article number	191110
Journal	Applied Physics Letters
Volume	88
Issue number	19
DOIs	https://doi.org/10.1063/1.2202389
State	Published - 2006

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@article{976a952caaae423aae2128080da7d672,

title = "Nitride light-emitting diodes grown on Si (111) using a TiN template",

abstract = "Nitride light-emitting diodes (LEDs) are grown on a Si (111) substrate with a TiN template. Transmission electron microscopy and x-ray diffraction indicate that the epitaxial relation follows Si (1,1,1) ∥TiN (1,1,1) ∥AlN (0,0,1), Si [1,1,0] ∥TiN [1,1,0], and Si [0,0,1] ∥TiN [0,0,1]. The reflectance measurement and simulation results indicate that the TiN can be adopted as a reflector to mitigate the substrate absorption problem, thus increasing the extraction efficiency of nitride LEDs grown on Si.",

author = "Chen, \{N. C.\} and Lien, \{W. C.\} and Shih, \{C. F.\} and Chang, \{P. H.\} and Wang, \{T. W.\} and Wu, \{M. C.\}",

year = "2006",

doi = "10.1063/1.2202389",

language = "英语",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

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TY - JOUR

T1 - Nitride light-emitting diodes grown on Si (111) using a TiN template

AU - Chen, N. C.

AU - Lien, W. C.

AU - Shih, C. F.

AU - Chang, P. H.

AU - Wang, T. W.

AU - Wu, M. C.

PY - 2006

Y1 - 2006

N2 - Nitride light-emitting diodes (LEDs) are grown on a Si (111) substrate with a TiN template. Transmission electron microscopy and x-ray diffraction indicate that the epitaxial relation follows Si (1,1,1) ∥TiN (1,1,1) ∥AlN (0,0,1), Si [1,1,0] ∥TiN [1,1,0], and Si [0,0,1] ∥TiN [0,0,1]. The reflectance measurement and simulation results indicate that the TiN can be adopted as a reflector to mitigate the substrate absorption problem, thus increasing the extraction efficiency of nitride LEDs grown on Si.

AB - Nitride light-emitting diodes (LEDs) are grown on a Si (111) substrate with a TiN template. Transmission electron microscopy and x-ray diffraction indicate that the epitaxial relation follows Si (1,1,1) ∥TiN (1,1,1) ∥AlN (0,0,1), Si [1,1,0] ∥TiN [1,1,0], and Si [0,0,1] ∥TiN [0,0,1]. The reflectance measurement and simulation results indicate that the TiN can be adopted as a reflector to mitigate the substrate absorption problem, thus increasing the extraction efficiency of nitride LEDs grown on Si.

UR - https://www.scopus.com/pages/publications/33646705854

U2 - 10.1063/1.2202389

DO - 10.1063/1.2202389

M3 - 文章

AN - SCOPUS:33646705854

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 191110

ER -

Nitride light-emitting diodes grown on Si (111) using a TiN template

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