Nitrogen effects on the sensitivity of tantalum nitride (TaxN) for ion sensing devices

Chao Sung Lai; Chia Ming Yang; Cheng En Lue; Chih Yao Wang; T. F. Lue; H. P. Ko; Tzu Ming Wang

Nitrogen effects on the sensitivity of tantalum nitride (Ta_xN) for ion sensing devices

Chao Sung Lai^*, Chia Ming Yang, Cheng En Lue, Chih Yao Wang, T. F. Lue, H. P. Ko, Tzu Ming Wang

^*Corresponding author for this work

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

A novel approach was proposed in this work for hydrogen ion sensing with Tantalum Nitride (Ta_xN). Ta_xN sensing membrane was sputtered by mixture gas which gas ratio was modified during the sputtering, from 6 to 20% with Ar and nitrogen mixture gas for tantalum (Ta) target. The optimized condition for Ta_xN-EIS structure improved the sensitivity to 50.47 mV/pH under 16% nitrogen mixture gas ratio. However sensitivity of all nitrogen ratio conditions could be improved for several mV/pH after 8 hours R.O. water immersion. Hysteresis width also changed with different nitrogen ratio and the minimum hysteresis was 5mV/pH at 12% nitrogen ratio. Due to the large variation of sensitivity and high linearity, the nitrogen ratio modification sputtering is suitable for employ TaN to high sensitivity ISFET and low sensitivity REFET application respectively.

Original language	English
Title of host publication	2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004
Pages	302-305
Number of pages	4
State	Published - 2004
Event	2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004 - Kuala Lumpur, Malaysia Duration: 04 12 2004 → 09 12 2004

Publication series

Name	Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics

Conference

Conference	2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004
Country/Territory	Malaysia
City	Kuala Lumpur
Period	04/12/04 → 09/12/04

Cite this

Lai, C. S., Yang, C. M., Lue, C. E., Wang, C. Y., Lue, T. F., Ko, H. P., & Wang, T. M. (2004). Nitrogen effects on the sensitivity of tantalum nitride (Ta_xN) for ion sensing devices. In 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004 (pp. 302-305). Article 1620893 (Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics).

@inproceedings{b21d83c1668b49f8954fe68b9f157005,

title = "Nitrogen effects on the sensitivity of tantalum nitride (TaxN) for ion sensing devices",

abstract = "A novel approach was proposed in this work for hydrogen ion sensing with Tantalum Nitride (TaxN). TaxN sensing membrane was sputtered by mixture gas which gas ratio was modified during the sputtering, from 6 to 20\% with Ar and nitrogen mixture gas for tantalum (Ta) target. The optimized condition for TaxN-EIS structure improved the sensitivity to 50.47 mV/pH under 16\% nitrogen mixture gas ratio. However sensitivity of all nitrogen ratio conditions could be improved for several mV/pH after 8 hours R.O. water immersion. Hysteresis width also changed with different nitrogen ratio and the minimum hysteresis was 5mV/pH at 12\% nitrogen ratio. Due to the large variation of sensitivity and high linearity, the nitrogen ratio modification sputtering is suitable for employ TaN to high sensitivity ISFET and low sensitivity REFET application respectively.",

author = "Lai, \{Chao Sung\} and Yang, \{Chia Ming\} and Lue, \{Cheng En\} and Wang, \{Chih Yao\} and Lue, \{T. F.\} and Ko, \{H. P.\} and Wang, \{Tzu Ming\}",

year = "2004",

language = "英语",

isbn = "0780386582",

series = "Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics",

pages = "302--305",

booktitle = "2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004",

note = "2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004 ; Conference date: 04-12-2004 Through 09-12-2004",

}

Lai, CS, Yang, CM, Lue, CE, Wang, CY, Lue, TF, Ko, HP & Wang, TM 2004, Nitrogen effects on the sensitivity of tantalum nitride (Ta_xN) for ion sensing devices. in 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004., 1620893, Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics, pp. 302-305, 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004, Kuala Lumpur, Malaysia, 04/12/04.

Nitrogen effects on the sensitivity of tantalum nitride (Ta_xN) for ion sensing devices. / Lai, Chao Sung; Yang, Chia Ming; Lue, Cheng En et al.
2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004. 2004. p. 302-305 1620893 (Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Nitrogen effects on the sensitivity of tantalum nitride (TaxN) for ion sensing devices

AU - Lai, Chao Sung

AU - Yang, Chia Ming

AU - Lue, Cheng En

AU - Wang, Chih Yao

AU - Lue, T. F.

AU - Ko, H. P.

AU - Wang, Tzu Ming

PY - 2004

Y1 - 2004

N2 - A novel approach was proposed in this work for hydrogen ion sensing with Tantalum Nitride (TaxN). TaxN sensing membrane was sputtered by mixture gas which gas ratio was modified during the sputtering, from 6 to 20% with Ar and nitrogen mixture gas for tantalum (Ta) target. The optimized condition for TaxN-EIS structure improved the sensitivity to 50.47 mV/pH under 16% nitrogen mixture gas ratio. However sensitivity of all nitrogen ratio conditions could be improved for several mV/pH after 8 hours R.O. water immersion. Hysteresis width also changed with different nitrogen ratio and the minimum hysteresis was 5mV/pH at 12% nitrogen ratio. Due to the large variation of sensitivity and high linearity, the nitrogen ratio modification sputtering is suitable for employ TaN to high sensitivity ISFET and low sensitivity REFET application respectively.

AB - A novel approach was proposed in this work for hydrogen ion sensing with Tantalum Nitride (TaxN). TaxN sensing membrane was sputtered by mixture gas which gas ratio was modified during the sputtering, from 6 to 20% with Ar and nitrogen mixture gas for tantalum (Ta) target. The optimized condition for TaxN-EIS structure improved the sensitivity to 50.47 mV/pH under 16% nitrogen mixture gas ratio. However sensitivity of all nitrogen ratio conditions could be improved for several mV/pH after 8 hours R.O. water immersion. Hysteresis width also changed with different nitrogen ratio and the minimum hysteresis was 5mV/pH at 12% nitrogen ratio. Due to the large variation of sensitivity and high linearity, the nitrogen ratio modification sputtering is suitable for employ TaN to high sensitivity ISFET and low sensitivity REFET application respectively.

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M3 - 会议稿件

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SN - 0780386582

SN - 9780780386587

T3 - Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics

SP - 302

EP - 305

BT - 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004

T2 - 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004

Y2 - 4 December 2004 through 9 December 2004

ER -

Nitrogen effects on the sensitivity of tantalum nitride (Ta_xN) for ion sensing devices

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