Nitrogen effects on the sensitivity of tantalum nitride (TaxN) for ion sensing devices

Chao Sung Lai*, Chia Ming Yang, Cheng En Lue, Chih Yao Wang, T. F. Lue, H. P. Ko, Tzu Ming Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A novel approach was proposed in this work for hydrogen ion sensing with Tantalum Nitride (TaxN). TaxN sensing membrane was sputtered by mixture gas which gas ratio was modified during the sputtering, from 6 to 20% with Ar and nitrogen mixture gas for tantalum (Ta) target. The optimized condition for TaxN-EIS structure improved the sensitivity to 50.47 mV/pH under 16% nitrogen mixture gas ratio. However sensitivity of all nitrogen ratio conditions could be improved for several mV/pH after 8 hours R.O. water immersion. Hysteresis width also changed with different nitrogen ratio and the minimum hysteresis was 5mV/pH at 12% nitrogen ratio. Due to the large variation of sensitivity and high linearity, the nitrogen ratio modification sputtering is suitable for employ TaN to high sensitivity ISFET and low sensitivity REFET application respectively.

Original languageEnglish
Title of host publication2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004
Pages302-305
Number of pages4
StatePublished - 2004
Event2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004 - Kuala Lumpur, Malaysia
Duration: 04 12 200409 12 2004

Publication series

NameProceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics

Conference

Conference2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004
Country/TerritoryMalaysia
CityKuala Lumpur
Period04/12/0409/12/04

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