Non-ideal effects improvement of SF6 plasma treated hafnium oxide film based on electrolyte-insulator-semiconductor structure for pH-sensor application

Tseng Fu Lu; Jer Chyi Wang; Chia Ming Yang; Chung Po Chang; Kuan I. Ho; Chi Fong Ai; Chao Sung Lai

doi:10.1016/j.microrel.2010.01.029

Non-ideal effects improvement of SF₆ plasma treated hafnium oxide film based on electrolyte-insulator-semiconductor structure for pH-sensor application

Tseng Fu Lu, Jer Chyi Wang, Chia Ming Yang, Chung Po Chang, Kuan I. Ho, Chi Fong Ai, Chao Sung Lai^*

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

18 Scopus citations

Abstract

A novel HfO₂ thin film with SF₆ plasma treatment as ion selective membrane on electrolyte-insulator-semiconductor structure for pH-sensor was proposed. The sensing characteristics on hydrogen ion detection and the non-ideal effects including drift effect, hysteresis phenomenon, and responses on interference ions were all presented in this article. The results show that the slight increase of pH-sensitivity is achieved and the non-ideal effects are improved after SF₆ plasma treatment. It is finally concluded that the HfO₂ thin film with SF₆ plasma treatment as ion selective membrane is suitable for pH detection and the optimum condition is 5 min for SF₆ plasma treatment.

Original language	English
Pages (from-to)	742-746
Number of pages	5
Journal	Microelectronics Reliability
Volume	50
Issue number	5
DOIs	https://doi.org/10.1016/j.microrel.2010.01.029
State	Published - 05 2010

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10.1016/j.microrel.2010.01.029

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@article{6304ff0a3d28442a88b990ed3de53ab3,

title = "Non-ideal effects improvement of SF6 plasma treated hafnium oxide film based on electrolyte-insulator-semiconductor structure for pH-sensor application",

abstract = "A novel HfO2 thin film with SF6 plasma treatment as ion selective membrane on electrolyte-insulator-semiconductor structure for pH-sensor was proposed. The sensing characteristics on hydrogen ion detection and the non-ideal effects including drift effect, hysteresis phenomenon, and responses on interference ions were all presented in this article. The results show that the slight increase of pH-sensitivity is achieved and the non-ideal effects are improved after SF6 plasma treatment. It is finally concluded that the HfO2 thin film with SF6 plasma treatment as ion selective membrane is suitable for pH detection and the optimum condition is 5 min for SF6 plasma treatment.",

author = "Lu, {Tseng Fu} and Wang, {Jer Chyi} and Yang, {Chia Ming} and Chang, {Chung Po} and Ho, {Kuan I.} and Ai, {Chi Fong} and Lai, {Chao Sung}",

year = "2010",

month = may,

doi = "10.1016/j.microrel.2010.01.029",

language = "英语",

volume = "50",

pages = "742--746",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Ltd",

number = "5",

}

TY - JOUR

T1 - Non-ideal effects improvement of SF6 plasma treated hafnium oxide film based on electrolyte-insulator-semiconductor structure for pH-sensor application

AU - Lu, Tseng Fu

AU - Wang, Jer Chyi

AU - Yang, Chia Ming

AU - Chang, Chung Po

AU - Ho, Kuan I.

AU - Ai, Chi Fong

AU - Lai, Chao Sung

PY - 2010/5

Y1 - 2010/5

N2 - A novel HfO2 thin film with SF6 plasma treatment as ion selective membrane on electrolyte-insulator-semiconductor structure for pH-sensor was proposed. The sensing characteristics on hydrogen ion detection and the non-ideal effects including drift effect, hysteresis phenomenon, and responses on interference ions were all presented in this article. The results show that the slight increase of pH-sensitivity is achieved and the non-ideal effects are improved after SF6 plasma treatment. It is finally concluded that the HfO2 thin film with SF6 plasma treatment as ion selective membrane is suitable for pH detection and the optimum condition is 5 min for SF6 plasma treatment.

AB - A novel HfO2 thin film with SF6 plasma treatment as ion selective membrane on electrolyte-insulator-semiconductor structure for pH-sensor was proposed. The sensing characteristics on hydrogen ion detection and the non-ideal effects including drift effect, hysteresis phenomenon, and responses on interference ions were all presented in this article. The results show that the slight increase of pH-sensitivity is achieved and the non-ideal effects are improved after SF6 plasma treatment. It is finally concluded that the HfO2 thin film with SF6 plasma treatment as ion selective membrane is suitable for pH detection and the optimum condition is 5 min for SF6 plasma treatment.

UR - http://www.scopus.com/inward/record.url?scp=77953129808&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2010.01.029

DO - 10.1016/j.microrel.2010.01.029

M3 - 文章

AN - SCOPUS:77953129808

SN - 0026-2714

VL - 50

SP - 742

EP - 746

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 5

ER -

Non-ideal effects improvement of SF₆ plasma treated hafnium oxide film based on electrolyte-insulator-semiconductor structure for pH-sensor application

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