Nonlinear resistive switching features of rapid-thermal-annealed aluminum nitride dielectrics with modified charge trapping behaviors

Nonlinear resistive switching (RS) features of aluminum nitride (AlN_x)-based resistance random access memories (RRAMs) with rapid thermal annealing (RTA) have been investigated. The operation voltages of AlN_x-based RRAMs are improved by RTA because of the reduction in nitride traps within AlN_x dielectrics. In addition, the centroids of nitride traps are modified by RTA and a tunneling barrier at the Ir/AlN_x interface is formed for the enhancement of nonlinearity to more than 10 during RS operation. The nonlinear behaviors of AlN_x-based RRAMs with RTA can be attributed to the combination of conduction mechanisms of direct tunneling (DT) and trap-assisted tunneling (TAT) at low- and high-voltage regions, respectively. Furthermore, superior device reliabilities of AlN_x-based RRAMs with RTA are achieved such as an endurance of over 500 cycles and data retention of more than 10⁴ s. The adjustable nonlinear features and superior memory properties render the annealed AlN_x-based RRAMs promising for future high-density nonvolatile memory arrays.