Normally-off matrix layout p-GaN gate AlGaN/GaN power HEMT with a through-substrate via process

Hsien Chin Chiu, Li Yi Peng, Chih Wei Yang, Hsiang Chun Wang, Kai Di Mai, Hsuan Ling Kao, Chien Kai Tung, Tsung Cheng Chang, Schang Jing Hon, Jia Ching Lin, Kuo Jen Chang, Yi Cheng Cheng

Research output: Contribution to journalJournal Article peer-review

5 Scopus citations

Abstract

Normally-off p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) on Si substrate with matrix heat redistribution layer (RDL) and through substrate via (TSV) technologies was investigated. Compared to traditional power cell design, the modified matrix heat RDL provides a circular arc layout together with an extra drain pad to reduce rectangular layout induced leakage current and the device total current density was also enhanced. In addition, TSV process beneath the GaN power HEMT active region spreads the heat efficiently and the lattice mismatch induced traps in transition/buffer layer were also removed. Based on the measured results analysis of dynamic RON to DC RON (RDC), the removal of lossy substrate in TSV is also beneficial for improving device switching behavior. Therefore, a high switching speed normally-off GaN power HEMTs together with a superior thermal management was proposed in this study.

Original languageEnglish
Article number021205
JournalJournal of Vacuum Science and Technology B
Volume34
Issue number2
DOIs
StatePublished - 01 03 2016

Bibliographical note

Publisher Copyright:
© 2016 American Vacuum Society.

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