Novel C-band and K-band 3-D InGaP/InGaAs MMICs using low-k BCB interlayer

Hsien Chin Chiu; Shih Cheng Yang; Cheng Kuo Lin; Ming Jyh Hwu; Yi Jen Chan

doi:10.1109/ICIPRM.2004.1442735

Novel C-band and K-band 3-D InGaP/InGaAs MMICs using low-k BCB interlayer

Hsien Chin Chiu^*, Shih Cheng Yang, Cheng Kuo Lin, Ming Jyh Hwu, Yi Jen Chan

^*Corresponding author for this work

Department of Electronic Engineering

National Central University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

A C-band and a K-band In_0.49Ga_0.51P/ In _0.15Ga_0.85As doped-channel HFET (DCFET) monolithic amplifier were developed and fabricated by using a low-k benzocyclobutene (BCB) interlayer technology. With the photo-sensitive low-k BCB interlayer (ε = 2.7), not only the passivation layer, but the capacitor insulator, via holes, and bridge process of the C-band circuit can be realized simultaneously, where the process complexity and cost can be reduced. Besides, the K-band MMIC utilizes a high impedance BCB CPW microstrip line (Z₀ = 70 Ω) for the biasing circuit, and a BCB CPW line (Z₀ = 50 Ω) for the RF signal transmission path. The low dielectric constant characteristic of the BCB interlayer is beneficial for common-ground bridge process.

Original language	English
Title of host publication	Conference Proceedings - 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM
Pages	382-385
Number of pages	4
DOIs	https://doi.org/10.1109/ICIPRM.2004.1442735
State	Published - 2004
Event	2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan Duration: 31 05 2004 → 04 06 2004

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)	1092-8669

Conference

Conference	2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM
Country/Territory	Japan
City	Kagoshima
Period	31/05/04 → 04/06/04

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10.1109/ICIPRM.2004.1442735

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Chiu, H. C., Yang, S. C., Lin, C. K., Hwu, M. J., & Chan, Y. J. (2004). Novel C-band and K-band 3-D InGaP/InGaAs MMICs using low-k BCB interlayer. In Conference Proceedings - 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM (pp. 382-385). Article WP-19 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2004.1442735

@inproceedings{c35673ebdd1d4b2994b56a1afda43915,

title = "Novel C-band and K-band 3-D InGaP/InGaAs MMICs using low-k BCB interlayer",

abstract = "A C-band and a K-band In0.49Ga0.51P/ In 0.15Ga0.85As doped-channel HFET (DCFET) monolithic amplifier were developed and fabricated by using a low-k benzocyclobutene (BCB) interlayer technology. With the photo-sensitive low-k BCB interlayer (ε = 2.7), not only the passivation layer, but the capacitor insulator, via holes, and bridge process of the C-band circuit can be realized simultaneously, where the process complexity and cost can be reduced. Besides, the K-band MMIC utilizes a high impedance BCB CPW microstrip line (Z0 = 70 Ω) for the biasing circuit, and a BCB CPW line (Z0 = 50 Ω) for the RF signal transmission path. The low dielectric constant characteristic of the BCB interlayer is beneficial for common-ground bridge process.",

author = "Chiu, {Hsien Chin} and Yang, {Shih Cheng} and Lin, {Cheng Kuo} and Hwu, {Ming Jyh} and Chan, {Yi Jen}",

year = "2004",

doi = "10.1109/ICIPRM.2004.1442735",

language = "英语",

isbn = "0780385950",

series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

pages = "382--385",

booktitle = "Conference Proceedings - 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM",

note = "2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM ; Conference date: 31-05-2004 Through 04-06-2004",

}

Chiu, HC, Yang, SC, Lin, CK, Hwu, MJ & Chan, YJ 2004, Novel C-band and K-band 3-D InGaP/InGaAs MMICs using low-k BCB interlayer. in Conference Proceedings - 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM., WP-19, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 382-385, 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM, Kagoshima, Japan, 31/05/04. https://doi.org/10.1109/ICIPRM.2004.1442735

Novel C-band and K-band 3-D InGaP/InGaAs MMICs using low-k BCB interlayer. / Chiu, Hsien Chin; Yang, Shih Cheng; Lin, Cheng Kuo et al.
Conference Proceedings - 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM. 2004. p. 382-385 WP-19 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Novel C-band and K-band 3-D InGaP/InGaAs MMICs using low-k BCB interlayer

AU - Chiu, Hsien Chin

AU - Yang, Shih Cheng

AU - Lin, Cheng Kuo

AU - Hwu, Ming Jyh

AU - Chan, Yi Jen

PY - 2004

Y1 - 2004

N2 - A C-band and a K-band In0.49Ga0.51P/ In 0.15Ga0.85As doped-channel HFET (DCFET) monolithic amplifier were developed and fabricated by using a low-k benzocyclobutene (BCB) interlayer technology. With the photo-sensitive low-k BCB interlayer (ε = 2.7), not only the passivation layer, but the capacitor insulator, via holes, and bridge process of the C-band circuit can be realized simultaneously, where the process complexity and cost can be reduced. Besides, the K-band MMIC utilizes a high impedance BCB CPW microstrip line (Z0 = 70 Ω) for the biasing circuit, and a BCB CPW line (Z0 = 50 Ω) for the RF signal transmission path. The low dielectric constant characteristic of the BCB interlayer is beneficial for common-ground bridge process.

AB - A C-band and a K-band In0.49Ga0.51P/ In 0.15Ga0.85As doped-channel HFET (DCFET) monolithic amplifier were developed and fabricated by using a low-k benzocyclobutene (BCB) interlayer technology. With the photo-sensitive low-k BCB interlayer (ε = 2.7), not only the passivation layer, but the capacitor insulator, via holes, and bridge process of the C-band circuit can be realized simultaneously, where the process complexity and cost can be reduced. Besides, the K-band MMIC utilizes a high impedance BCB CPW microstrip line (Z0 = 70 Ω) for the biasing circuit, and a BCB CPW line (Z0 = 50 Ω) for the RF signal transmission path. The low dielectric constant characteristic of the BCB interlayer is beneficial for common-ground bridge process.

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U2 - 10.1109/ICIPRM.2004.1442735

DO - 10.1109/ICIPRM.2004.1442735

M3 - 会议稿件

AN - SCOPUS:23744437096

SN - 0780385950

T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

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EP - 385

BT - Conference Proceedings - 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM

T2 - 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM

Y2 - 31 May 2004 through 4 June 2004

ER -

Chiu HC, Yang SC, Lin CK, Hwu MJ, Chan YJ. Novel C-band and K-band 3-D InGaP/InGaAs MMICs using low-k BCB interlayer. In Conference Proceedings - 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM. 2004. p. 382-385. WP-19. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). doi: 10.1109/ICIPRM.2004.1442735

Novel C-band and K-band 3-D InGaP/InGaAs MMICs using low-k BCB interlayer

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