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Novel Dynamic Threshold Voltage Contact Etching Stop Layer (DT-CESL) Strained HfO2 nMOSFET for Very Low Voltage Operation (0.7V)

  • Woei-Cherng Wu
  • , Tien-Sheng Chao
  • , Kuan-Ti Wang
  • , Shih-Ching Lee
  • , Te-Hsin Chiu
  • , Tsung-Yi Lu
  • , Chao-Sung Lai
  • , Jer-Chyi Wang
  • , Ming-Wen Ma
  • , Kuo-Hsing Kao
  • , Wen-Cheng Lo

Research output: Contribution to conferenceProceeding

Original languageAmerican English
StatePublished - 2009
Event2009 International Conference on Solid State Devices and Materials (SSDM 2009) - Miyagi, Japan
Duration: 07 10 200909 10 2009

Conference

Conference2009 International Conference on Solid State Devices and Materials (SSDM 2009)
Period07/10/0909/10/09

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