Abstract
We have demonstrated improvement of ON/OFF ratio and reduction of leakage current in polysilicon thin film transistors by (A) inserting a thin polycrystalline silicon-germanium layer in the middle of the channel to confine the carriers away from the highly defective polysilicon/silicon-dioxide interface by using the bandgap offset in the valence band, and (B) introducing near-intrinsic regions at the source/drain ends of the channel to reduce the peak lateral electric field in the channel, thereby reducing field emission through grain boundaries.
| Original language | English |
|---|---|
| Pages (from-to) | 669-672 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting, IEDM |
| State | Published - 1995 |
| Externally published | Yes |
| Event | Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA Duration: 10 12 1995 → 13 12 1995 |