Abstract
Multiple-gate FETs such as FinFETs would be adopted at the 22nm technology generation and beyond, owing to the better control of short-channel effects (SCEs) in high-volume manufacturing. In this paper, we present a novel implantation mode called 'FlexScan' that consists of a series of various rotated angles. We perform the implant with FlexScan mode by Monte-Carlo simulation. FlexScan shows more conformal doping distribution in the fin structure. We expect that it could reduce device leakage and device variation caused from random doping distribution. The FlexScan mode could be used for 3D device doping process needed conformal doping profile.
Original language | English |
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Title of host publication | Proceedings of the International Conference on Ion Implantation Technology |
Editors | Mulpuri V. Rao |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781479952120 |
DOIs | |
State | Published - 29 10 2014 |
Event | 20th International Conference on Ion Implantation Technology, IIT 2014 - Portland, United States Duration: 30 06 2014 → 04 07 2014 |
Publication series
Name | Proceedings of the International Conference on Ion Implantation Technology |
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Conference
Conference | 20th International Conference on Ion Implantation Technology, IIT 2014 |
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Country/Territory | United States |
City | Portland |
Period | 30/06/14 → 04/07/14 |
Bibliographical note
Publisher Copyright:© 2014 IEEE.
Keywords
- FinFET
- Monte-Carlo simulation
- conformal
- ion implant