Novel implantation mode application in FinFET structure

Ger Pin Lin*, Ching I. Li, Po Heng Lin, Chih Ming Tai, Ruey Dar Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Multiple-gate FETs such as FinFETs would be adopted at the 22nm technology generation and beyond, owing to the better control of short-channel effects (SCEs) in high-volume manufacturing. In this paper, we present a novel implantation mode called 'FlexScan' that consists of a series of various rotated angles. We perform the implant with FlexScan mode by Monte-Carlo simulation. FlexScan shows more conformal doping distribution in the fin structure. We expect that it could reduce device leakage and device variation caused from random doping distribution. The FlexScan mode could be used for 3D device doping process needed conformal doping profile.

Original languageEnglish
Title of host publicationProceedings of the International Conference on Ion Implantation Technology
EditorsMulpuri V. Rao
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479952120
DOIs
StatePublished - 29 10 2014
Event20th International Conference on Ion Implantation Technology, IIT 2014 - Portland, United States
Duration: 30 06 201404 07 2014

Publication series

NameProceedings of the International Conference on Ion Implantation Technology

Conference

Conference20th International Conference on Ion Implantation Technology, IIT 2014
Country/TerritoryUnited States
CityPortland
Period30/06/1404/07/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

Keywords

  • FinFET
  • Monte-Carlo simulation
  • conformal
  • ion implant

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