Abstract
Novel IrOx/SiO2/W 10x10 μm2 cross-point structure has been introduced for high-density resistive memory as well as urea/LOXL2 sensing for the first time. The Ir0/Ir3+/Ir4+ oxidation states are confirmed by X-ray photo-electron spectroscopy (XPS) analysis. A dc endurance of > 1000 cycles at low current compliance (CC) of 200 nA and long program/erase (P/E) endurance of >1010 cycles with a small pulse width of 100 ns are obtained. Super-nernstian pH sensitivity of 140 mV/pH with 99.45% linearity, and LOXL2 with a low concentration of 1 pM through porous IrOx membrane are obtained.
Original language | English |
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Title of host publication | 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 1-2 |
Number of pages | 2 |
ISBN (Electronic) | 9781538648254 |
DOIs | |
State | Published - 03 07 2018 |
Event | 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 - Hsinchu, Taiwan Duration: 16 04 2018 → 19 04 2018 |
Publication series
Name | 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 |
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Conference
Conference | 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 |
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Country/Territory | Taiwan |
City | Hsinchu |
Period | 16/04/18 → 19/04/18 |
Bibliographical note
Publisher Copyright:© 2018 IEEE.