Novel Low-temperature-grown GaAs Based Photodiode for High-Speed/Power Performance by Use of Molecular-Beam-Epitaxy (MBE) Grown Technique

H.C. Hsu, J.W. Shi, Fan-Hsiu Huang, W.S. Liu, J.I. Chyi, Ja-Yu Lu, C.K. Sun, Ci-Ling Pan

Research output: Contribution to journal › Journal Article › peer-review

Cite this

@article{d97b786662634d31a89adab26164ed89,

title = "Novel Low-temperature-grown GaAs Based Photodiode for High-Speed/Power Performance by Use of Molecular-Beam-Epitaxy (MBE) Grown Technique",

author = "H.C. Hsu and J.W. Shi and Fan-Hsiu Huang and W.S. Liu and J.I. Chyi and Ja-Yu Lu and C.K. Sun and Ci-Ling Pan",

year = "2005",

language = "American English",

volume = "18",

pages = "7--10",

journal = "真空科技",

issn = "1017-091X",

number = "3",

}

TY - JOUR

T1 - Novel Low-temperature-grown GaAs Based Photodiode for High-Speed/Power Performance by Use of Molecular-Beam-Epitaxy (MBE) Grown Technique

AU - Hsu, H.C.

AU - Shi, J.W.

AU - Huang, Fan-Hsiu

AU - Liu, W.S.

AU - Chyi, J.I.

AU - Lu, Ja-Yu

AU - Sun, C.K.

AU - Pan, Ci-Ling

PY - 2005

Y1 - 2005

M3 - Journal Article

SN - 1017-091X

VL - 18

SP - 7

EP - 10

JO - 真空科技

JF - 真空科技

IS - 3

ER -