Abstract
A novel in situ method to monitor the InAs epilayer surface roughness by using pyrometer reading is proposed. The variation of pyrometer reading can be related to the surface morphology of the InAs epilayer deposited on GaAs, and provides an easy way for rapid calibration of growth conditions. The atomic force microscope is applied to measure the surface roughness which verifies the correlation between InAs epilayer morphology and the pyrometer reading.
Original language | English |
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Pages (from-to) | 984-986 |
Number of pages | 3 |
Journal | Japanese Journal of Applied Physics |
Volume | 36 |
Issue number | 3 SUPPL. A |
DOIs | |
State | Published - 03 1997 |
Externally published | Yes |
Keywords
- InAs
- Molecular beam epitaxy
- Pyrometer
- Surface morphology