Novel method for monitoring the surface roughness during molecular beam epitaxy

Ray Ming Lin*, Si Chen Lee

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

1 Scopus citations

Abstract

A novel in situ method to monitor the InAs epilayer surface roughness by using pyrometer reading is proposed. The variation of pyrometer reading can be related to the surface morphology of the InAs epilayer deposited on GaAs, and provides an easy way for rapid calibration of growth conditions. The atomic force microscope is applied to measure the surface roughness which verifies the correlation between InAs epilayer morphology and the pyrometer reading.

Original languageEnglish
Pages (from-to)984-986
Number of pages3
JournalJapanese Journal of Applied Physics
Volume36
Issue number3 SUPPL. A
DOIs
StatePublished - 03 1997
Externally publishedYes

Keywords

  • InAs
  • Molecular beam epitaxy
  • Pyrometer
  • Surface morphology

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