Novel Reference Electrode-Insulator-Nitride-Oxide- Semiconductor (RINOS) Structure with Sm2O3 Sensing Membrane for pH-sensor application

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2010
Event	Solid State Devices and Materials (SSDM 2010) - Tokyo, Japan Duration: 22 09 2010 → 24 09 2010

Conference	Solid State Devices and Materials (SSDM 2010)
Period	22/09/10 → 24/09/10

Cite this

@conference{82266f5bbadb4611b08fea635a1a47ca,

title = "Novel Reference Electrode-Insulator-Nitride-Oxide- Semiconductor (RINOS) Structure with Sm2O3 Sensing Membrane for pH-sensor application",

author = "Hui-Yu Shih and Jer-Chyi Wang and Tseng-Fu Lu and Chao-Sung Lai and Chyuan-Haur Kao and Tung-Ming Pan",

year = "2010",

language = "American English",

note = "Solid State Devices and Materials (SSDM 2010) ; Conference date: 22-09-2010 Through 24-09-2010",

}

TY - CONF

T1 - Novel Reference Electrode-Insulator-Nitride-Oxide- Semiconductor (RINOS) Structure with Sm2O3 Sensing Membrane for pH-sensor application

AU - Shih, Hui-Yu

AU - Wang, Jer-Chyi

AU - Lu, Tseng-Fu

AU - Lai, Chao-Sung

AU - Kao, Chyuan-Haur

AU - Pan, Tung-Ming

PY - 2010

Y1 - 2010

M3 - Proceeding

T2 - Solid State Devices and Materials (SSDM 2010)

Y2 - 22 September 2010 through 24 September 2010

ER -